Fabrication of hall device structures in 3C-SiC using microelectromechanical processing technology

Jiang, Liudi, Anderson, S., Thong, E., Cheung, R., Zorman, C.A. and Mehregany, M. (2006) Fabrication of hall device structures in 3C-SiC using microelectromechanical processing technology. Microelectronic Engineering, 83 (4-9), 1396-1399. (doi:10.1016/j.mee.2006.01.212).

Abstract

A fabrication method for the construction of Hall device structures in poly-3C-SiC film grown onto poly-silicon on silicon dioxide on silicon substrate has been developed. The technique allows three-dimensional structures to be formed in 3C-SiC on silicon substrates. Because of the procedures’ compatibility with conventional MEMS construction processes, the design can be integrated during MEMS processing to enable electronic properties of the 3C-SiC film to be characterised simultaneously. For the Hall bar structures fabricated in our current 3C-SiC films, a high resistive behaviour for the undoped 3C-SiC films has been measured while the intentionally nitrogen doped films show around 4–6 · 10²⁰/cm³ carrier concentration with a Hall mobility of around 2 cm²/V s.

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Contributors

Author: Liudi Jiang

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