﻿READ ME File For 'Dataset for article "An Electrical Characterisation Methodology for Benchmarking Memristive Device Technologies"'

Dataset DOI: 10.5258/SOTON/D1153

Licence: CC BY

Paper title: An Electrical Characterisation Methodology for Benchmarking
Memristive Device Technologies

Authors: Spyros Stathopoulos, Loukas Michalas, Ali Khiat, Alexantrou Serb and
Themis Prodromakis

Corr. author: Prof Themis Prodromakis (t.prodromakis@soton.ac.uk)
ORCID: 0000-0002-6267-6909

Institution: University of Southampton
Department: Zepler Institute for Photonics and Nanoelectronics
Group: Electronic Devices and Materials Group
Address: Highfield Campus, Southampton, SO17 1BJ, UK

Period of data collection: Jun 2018 to May 2019

Related projects: EP/R024642/1

Manuscript accepted: 15 November 2019

Journal: Scientific Reports
Publication DOI: 10.1038/s41598-019-55322-4

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Instructions on reading the provided data
=========================================

The data for each figure is contained within its respective folder. All figures
are accompanied by their corresponding gnuplot script used to generated.
Gnuplot is open source software [1]. The scripts can be used either by
double-clicking on them (provided gnuplot is installed) or loaded directly
through the command line (quotes are mandatory).

> load 'FILENAME.gpl'

[1] http://www.gnuplot.info

Unless otherwise measured in this document all units are in SI standard units.

In some particular cases raw output data from our measurement platform is
provided. In that case, the column format of this file is

#1 and #2: wordline and bitline of the specific device
#3: resistance
#4: applied voltage
#5: pulse width; pulse width is only recorded for programming pulses. For read-out
pulses the exact pulse width is unspecified and it's recorded as 0.0.
#6: test type: F R0 V=0.5 → read devices at 0.5V; FF_x → electroforming
routine; CT_x → curve tracer; etc.
#7: read-out method
#8: read-out voltage

Figure 1
--------
Conceptual information; no actual data used

Figure 2 - Switching dynamics info
----------------------------------
Relative resistance change over applied voltage. The `tsv` files contain
tab-separated data. For both classes of devices column #1 is the applied bias
and column #2 is the relative resistive change.

Figure 3 - Current-Voltage characteristics
------------------------------------------
Different I-V characteristics are shown here. For subfigures (a)—(d) data are
contained within the respective files in a tab-separated format. Column #1 is
applied voltage and column #2 is measured current. For subfigure (e) the columns
are: column #1: 1000/T; columns #2-10: ln(I/T²(AK⁻²)) for different activation
energies as extracted from the I-Vs and documented on fig3e.tsv.

Figure 4 - Forming behaviours
-----------------------------
Data for the I-Vs of subfigs (a)-(c) are available in fig04a.tsv, fig04b.tsv
and fig04c.tsv using a tab-separated format. Column #1 is applied voltage and
column #2 is measured current.

Figures 4d and 4e are exhibiting a pulsed-based approach to electroforming.
Raw data as extracted from our measurement platform is available in fig04d+e.csv
file (comma-separated); The columns are as explained above.

Figure 5 - Multi-state assessment
---------------------------------
Recorded stable states for a specific device. `fig05.csv` contains the raw data
from our measurement platform (comma-separated). `fig05-recorded-states.csv`
contains all recorded stable states. Column format is: #1 → state index; #2 →
point in sequence (file `fig05.csv`) where the state was recorded; #3 →
resistance; #4/#5 → lower and upper bounds. `fig05-recorded-states-idx.csv`
contains a list of the point in sequence where states were recorded. This is only
used in an assistive manner to aid in the analysis of script `fig05.gpl` but
is otherwise identical with column #2 of `fig05-recorded-states.csv`.

Figure 6 - Performance metrics
------------------------------
Retention data (sequential resistance readings) for two different devices. Data
for device in fig 6{a,b} is available in files `fig06{a,b}.tsv` (tab-separated).
The columns are as follow
#1 → timestamp (HI state)
#2 → resistance (HI state)
#3 → timestamp (LO state)
#4 → resistance (LO state)

Figures 6c-e are endurance measurements and data are available in files
`fig06[c-e].csv`. These are extracted bits from the raw data and follow the
format described in the introduction.

Figure 7 - Behavioural model
----------------------------
Data file `fig07.tsv` contains two pairs of columns (tab-separated). The first
pair (columns #1 and #2) are the extracted data from the device under bias
(pulse #, resistance read @ 0.5 V; red dots). The second pair (columns #3 and
#4; blue line) are sampled points from the model discussed in the paper.

Each set of 500 points corresponds to a train of fixed applied pulses (10 μs
pulse width; 1 ms interpulse duration). The voltage of the pulse is as shown on
Fig. 7 on the main paper. For documentation purposes it is also listed here.

   Points  |  Voltage
===========+===========
    1— 500 |  +1.5 V
  500—1000 |  -1.7 V
 1000—1500 |  +1.6 V
 1500—2000 |  -1.8 V
 2000—2500 |  +1.7 V
 2500—3000 |  -1.9 V
 3000—3500 |  +1.8 V
 3500—4000 |  -2.0 V
 4000—4500 |  +1.9 V
 4500-5000 |  -2.1 V
