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Behavior of gold-doped silicon substrate under small- and large-RF signal

Behavior of gold-doped silicon substrate under small- and large-RF signal
Behavior of gold-doped silicon substrate under small- and large-RF signal
In this paper, small- and large-signal performances of passive devices integrated on high-resistivity, trap-rich and gold-doped silicon wafers are presented and compared through measurements and simulations. The gold-doped silicon substrate was produced starting from standard silicon having a nominal resistivity of 56 cm. We show that the gold-doped substrate presents high effective resistivity and low losses suitable for RF applications. This has been demonstrated by measuring coplanar waveguides, crosstalk, inductors and band pass filter where we observed similar performances for small-signal measurements compared with trap-rich substrate. Large-signal measurements of gold-doped substrates show 60 dBm lower harmonic distortion than high-resistivity substrates, and 10 dB lower than trap-rich substrate at 0 V DC bias. However, a large DC bias dependence on the harmonic distortion induced by the gold-doped substrate is observed. This unexpected behavior is explained using the Fermi level localization in the silicon bandgap for the different DC bias conditions.
0038-1101
Nabet, Massinissa
6af5e1a7-e6b4-4c6d-a499-028a5badaea7
Rack, Martin
d6dc5658-50cd-4051-8523-e738dcb952fb
de Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c
Raskin, Jean-Pierre
844ad8b1-e287-4a7a-9d15-2a632877171d
Nabet, Massinissa
6af5e1a7-e6b4-4c6d-a499-028a5badaea7
Rack, Martin
d6dc5658-50cd-4051-8523-e738dcb952fb
de Groot, C.H. (Kees)
92cd2e02-fcc4-43da-8816-c86f966be90c
Raskin, Jean-Pierre
844ad8b1-e287-4a7a-9d15-2a632877171d

Nabet, Massinissa, Rack, Martin, de Groot, C.H. (Kees) and Raskin, Jean-Pierre (2019) Behavior of gold-doped silicon substrate under small- and large-RF signal. Solid-State Electronics, [107718]. (doi:10.1016/j.sse.2019.107718).

Record type: Article

Abstract

In this paper, small- and large-signal performances of passive devices integrated on high-resistivity, trap-rich and gold-doped silicon wafers are presented and compared through measurements and simulations. The gold-doped silicon substrate was produced starting from standard silicon having a nominal resistivity of 56 cm. We show that the gold-doped substrate presents high effective resistivity and low losses suitable for RF applications. This has been demonstrated by measuring coplanar waveguides, crosstalk, inductors and band pass filter where we observed similar performances for small-signal measurements compared with trap-rich substrate. Large-signal measurements of gold-doped substrates show 60 dBm lower harmonic distortion than high-resistivity substrates, and 10 dB lower than trap-rich substrate at 0 V DC bias. However, a large DC bias dependence on the harmonic distortion induced by the gold-doped substrate is observed. This unexpected behavior is explained using the Fermi level localization in the silicon bandgap for the different DC bias conditions.

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Behavior of gold-doped silicon substrate under small- and large-RF signal - Accepted Manuscript
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Accepted/In Press date: 27 November 2019
e-pub ahead of print date: 27 November 2019

Identifiers

Local EPrints ID: 437228
URI: http://eprints.soton.ac.uk/id/eprint/437228
ISSN: 0038-1101
PURE UUID: 8b4cf8e7-f230-45b6-835c-59c7375d2215
ORCID for C.H. (Kees) de Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 22 Jan 2020 17:32
Last modified: 27 Nov 2020 05:01

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Author: Massinissa Nabet
Author: Martin Rack
Author: Jean-Pierre Raskin

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