Laser processing of amorphous semiconductors on planar substrates for photonic and optoelectronic applications
Laser processing of amorphous semiconductors on planar substrates for photonic and optoelectronic applications
We report results of laser processing on amorphous silicon and silicon-germanium films deposited on planar substrates. Pre-patterned a-Si waveguides were recrystallized and reflowed to enhance their material and optical properties. Formation of millimeter long crystal grains and surface roughness of 0.52 nm enable optical losses to become as low as 5.3 dB/cm. Laser-driven phase separation in the binary alloy of a-SiGe allows fabrication of composition graded microstructures with Si-rich and Ge-rich regions. A composition tuning capability of 40% was demonstrated.
Laser processing, amorphous semiconductors, SiGe, Optical waveguides, semiconductor alloys, phase segregation
Aktaş, Ozan
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Franz, Yohann
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Runge, Antoine
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MacFarquhar, Stuart, James
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Oo, Swe
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Mittal, Vinita
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Tarazona, Antulio
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Chong, Harold
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Mailis, Sakellaris
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Peacock, Anna
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26 July 2019
Aktaş, Ozan
2e90db41-f409-431f-9827-2e2577a52457
Franz, Yohann
023ff50d-4172-4d4f-9a20-bb365820fb5d
Runge, Antoine
24fd1d59-5328-4201-8eb3-172f237563fa
MacFarquhar, Stuart, James
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Oo, Swe
6495f6da-8f17-4484-98fb-6151b4efbd9a
Mittal, Vinita
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Tarazona, Antulio
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Chong, Harold
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Mailis, Sakellaris
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Peacock, Anna
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Aktaş, Ozan, Franz, Yohann, Runge, Antoine, MacFarquhar, Stuart, James, Oo, Swe, Mittal, Vinita, Tarazona, Antulio, Chong, Harold, Mailis, Sakellaris and Peacock, Anna
(2019)
Laser processing of amorphous semiconductors on planar substrates for photonic and optoelectronic applications.
Meta 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics, Lisbon Portugal, Lisbon, Portugal.
23 - 26 Jul 2019.
2 pp
.
Record type:
Conference or Workshop Item
(Other)
Abstract
We report results of laser processing on amorphous silicon and silicon-germanium films deposited on planar substrates. Pre-patterned a-Si waveguides were recrystallized and reflowed to enhance their material and optical properties. Formation of millimeter long crystal grains and surface roughness of 0.52 nm enable optical losses to become as low as 5.3 dB/cm. Laser-driven phase separation in the binary alloy of a-SiGe allows fabrication of composition graded microstructures with Si-rich and Ge-rich regions. A composition tuning capability of 40% was demonstrated.
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Published date: 26 July 2019
Venue - Dates:
Meta 2019: 10th International Conference on Metamaterials, Photonic Crystals and Plasmonics, Lisbon Portugal, Lisbon, Portugal, 2019-07-23 - 2019-07-26
Keywords:
Laser processing, amorphous semiconductors, SiGe, Optical waveguides, semiconductor alloys, phase segregation
Identifiers
Local EPrints ID: 437612
URI: http://eprints.soton.ac.uk/id/eprint/437612
PURE UUID: 1f322200-5d4b-4d8a-9df1-7a86a3333b39
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Date deposited: 06 Feb 2020 17:32
Last modified: 17 Mar 2024 03:12
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Contributors
Author:
Ozan Aktaş
Author:
Yohann Franz
Author:
Antoine Runge
Author:
Stuart, James MacFarquhar
Author:
Swe Oo
Author:
Vinita Mittal
Author:
Antulio Tarazona
Author:
Harold Chong
Author:
Sakellaris Mailis
Author:
Anna Peacock
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