Solution-based synthesis of few-layer WS₂ large area continuous films for electronic applications

Abstract

Unlike MoS₂ ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS₂ films using this approach has been more challenging. Here, we report a method for growth of few-layer WS₂ that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH₄)₂WS₄) films by two-step high temperature annealing without additional sulphurization. this facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS₂ films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS₂ films are highly crystalline and stoichiometric. Finally, WS₂ films as-deposited on SiO₂/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.

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Identifiers

ORCID for Omar A. Abbas: orcid.org/0000-0002-3067-5311

ORCID for Ioannis Zeimpekis: orcid.org/0000-0002-7455-1599

ORCID for Chung-Che Huang: orcid.org/0000-0003-3471-2463

ORCID for Daniel Hewak: orcid.org/0000-0002-2093-5773

ORCID for Sakellaris Mailis: orcid.org/0000-0001-8100-2670

ORCID for Pier-John Sazio: orcid.org/0000-0002-6506-9266

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