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Solution-based synthesis of few-layer WS2 large area continuous films for electronic applications

Solution-based synthesis of few-layer WS2 large area continuous films for electronic applications
Solution-based synthesis of few-layer WS2 large area continuous films for electronic applications
Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. this facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.
2045-2322
1-10
Abbas, Omar A.
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Zeimpekis, Ioannis
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Wang, He
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Lewis, Adam H.
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Sessions, Neil
ee737092-56b4-403e-a2f9-764e07e42625
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Aspiotis, Nikolaos
ce70e544-cfad-4d4f-86b3-d41d43d036cd
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel
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Mailis, Sakellaris
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Sazio, Pier-John
0d6200b5-9947-469a-8e97-9147da8a7158
Abbas, Omar A.
e7642f73-874e-4d19-a6c0-4753f6cbfcd0
Zeimpekis, Ioannis
a2c354ec-3891-497c-adac-89b3a5d96af0
Wang, He
0bb8fa1d-de57-42f1-935c-369731be4407
Lewis, Adam H.
da8521e2-59ea-4254-ba01-d13e5c9a9a77
Sessions, Neil
ee737092-56b4-403e-a2f9-764e07e42625
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Aspiotis, Nikolaos
ce70e544-cfad-4d4f-86b3-d41d43d036cd
Huang, Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hewak, Daniel
87c80070-c101-4f7a-914f-4cc3131e3db0
Mailis, Sakellaris
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Sazio, Pier-John
0d6200b5-9947-469a-8e97-9147da8a7158

Abbas, Omar A., Zeimpekis, Ioannis, Wang, He, Lewis, Adam H., Sessions, Neil, Ebert, Martin, Aspiotis, Nikolaos, Huang, Chung-Che, Hewak, Daniel, Mailis, Sakellaris and Sazio, Pier-John (2020) Solution-based synthesis of few-layer WS2 large area continuous films for electronic applications. Scientific Reports, 10, 1-10, [1696]. (doi:10.1038/s41598-020-58694-0).

Record type: Article

Abstract

Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. this facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.

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s41598-020-58694-0 - Version of Record
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Accepted/In Press date: 14 January 2020
Published date: 3 February 2020

Identifiers

Local EPrints ID: 437952
URI: http://eprints.soton.ac.uk/id/eprint/437952
ISSN: 2045-2322
PURE UUID: 04180054-c9d1-4dee-81c8-4a354d13373a
ORCID for Omar A. Abbas: ORCID iD orcid.org/0000-0002-3067-5311
ORCID for Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463
ORCID for Daniel Hewak: ORCID iD orcid.org/0000-0002-2093-5773
ORCID for Sakellaris Mailis: ORCID iD orcid.org/0000-0001-8100-2670
ORCID for Pier-John Sazio: ORCID iD orcid.org/0000-0002-6506-9266

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Date deposited: 24 Feb 2020 17:31
Last modified: 25 Feb 2020 01:37

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Contributors

Author: Omar A. Abbas ORCID iD
Author: Ioannis Zeimpekis
Author: He Wang
Author: Adam H. Lewis
Author: Neil Sessions
Author: Martin Ebert
Author: Chung-Che Huang ORCID iD
Author: Daniel Hewak ORCID iD
Author: Pier-John Sazio ORCID iD

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