O-band N-rich silicon nitride MZI based on GST

Faneca Ruedas, Joaquin, Domínguez Bucio, Thalia, Gardes, Frederic and Baldycheva, Anna (2020) O-band N-rich silicon nitride MZI based on GST. Applied Physics Letters, 116 (9), 93502, [093502]. (doi:10.1063/1.5140350).

Record type: Article

Abstract

We have experimentally demonstrated an O-band Mach–Zehnder interferometer (MZI) based on an N-rich silicon nitride platform combined with Ge₂Sb₂Te₅ for future optical communication applications. The device operation relies on controlling the waveguide's losses using a phase change material cell, which can be changed from amorphous (low-loss) to crystalline (high-loss). An extinction ratio as high as 11 dB was obtained between the amorphous (ON) and the crystalline (OFF) states of the MZI optical building block. The insertion loss of the MZI structure per cell unit length was measured to be as high as 0.87 dB/μm in the OFF state and as low as 0.064 dB/μm in the ON state for TM polarization.

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APL19-AR-10509[12781] - Accepted Manuscript

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Accepted/In Press date: 18 February 2020

Published date: 6 March 2020

Additional Information: Funding Information: We acknowledge financial support from The Engineering and Physical Sciences Research Council (EPSRC) of the United Kingdom via the EPSRC (Grant Nos. EP/L015331/1, EP/N035569/ 1, EP/N013247/1, EP/L021129/1, and EP/R003076/1) and the EU Project ID 688516 COSMICC. Publisher Copyright: © 2020 Author(s).

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