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O-band N-rich silicon nitride MZI based on GST

O-band N-rich silicon nitride MZI based on GST
O-band N-rich silicon nitride MZI based on GST
We have experimentally demonstrated an O-band Mach–Zehnder interferometer (MZI) based on an N-rich silicon nitride platform combined with Ge2Sb2Te5 for future optical communication applications. The device operation relies on controlling the waveguide's losses using a phase change material cell, which can be changed from amorphous (low-loss) to crystalline (high-loss). An extinction ratio as high as 11 dB was obtained between the amorphous (ON) and the crystalline (OFF) states of the MZI optical building block. The insertion loss of the MZI structure per cell unit length was measured to be as high as 0.87 dB/μm in the OFF state and as low as 0.064 dB/μm in the ON state for TM polarization.
0003-6951
93502
Faneca Ruedas, Joaquin
f275284c-8c6a-4128-b303-3715ced9471d
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Baldycheva, Anna
cd4d0080-e4a8-4684-94a1-6ebacf012b32
Faneca Ruedas, Joaquin
f275284c-8c6a-4128-b303-3715ced9471d
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Gardes, Frederic
7a49fc6d-dade-4099-b016-c60737cb5bb2
Baldycheva, Anna
cd4d0080-e4a8-4684-94a1-6ebacf012b32

Faneca Ruedas, Joaquin, Domínguez Bucio, Thalia, Gardes, Frederic and Baldycheva, Anna (2020) O-band N-rich silicon nitride MZI based on GST. Applied Physics Letters, 116 (9), 93502, [093502]. (doi:10.1063/1.5140350).

Record type: Article

Abstract

We have experimentally demonstrated an O-band Mach–Zehnder interferometer (MZI) based on an N-rich silicon nitride platform combined with Ge2Sb2Te5 for future optical communication applications. The device operation relies on controlling the waveguide's losses using a phase change material cell, which can be changed from amorphous (low-loss) to crystalline (high-loss). An extinction ratio as high as 11 dB was obtained between the amorphous (ON) and the crystalline (OFF) states of the MZI optical building block. The insertion loss of the MZI structure per cell unit length was measured to be as high as 0.87 dB/μm in the OFF state and as low as 0.064 dB/μm in the ON state for TM polarization.

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APL19-AR-10509[12781] - Accepted Manuscript
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Accepted/In Press date: 18 February 2020
Published date: 6 March 2020

Identifiers

Local EPrints ID: 438515
URI: http://eprints.soton.ac.uk/id/eprint/438515
ISSN: 0003-6951
PURE UUID: db593e75-cef1-4972-b715-2494ef35b333
ORCID for Thalia Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

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Date deposited: 12 Mar 2020 17:30
Last modified: 15 Sep 2021 05:26

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Contributors

Author: Joaquin Faneca Ruedas
Author: Frederic Gardes
Author: Anna Baldycheva

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