Li, Z., Husain, M.K., Liu, F., Giblin, S., Fletcher, J., Kataoka, M., Andreev, A., Ibukuro, K., Hillier, J., Tomita, I., Rutt, H.N., Tsuchiya, Y. and Saito, S. (2020) Artificial molecular bonding in Si quantum dots tuned by double-layer gates. Applied Physics Letters.
Abstract
A quantum-state-controllable artificial molecular device, which plays an important role in such computation directions as quantum/neural computations, is fabricated from a gate-defined silicon (Si) quantum dots in a Si nanowire formed with complementary metal-oxide-semiconductor field-effect-transistor (MOSFET) technologies.The fabricated device demonstrates a state change, through low-temperature transport measurements,from an ionic-bonding state in isolated dots to a covalent-bonding state in coupled dots; transport simulation in qualitatively good agreement with the experimental result is presented for the isolated-dot case, and differential transconductance is provided so that transport for the coupled-dot case can be well understood.
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