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Artificial molecular bonding in Si quantum dots tuned by double-layer gates

Artificial molecular bonding in Si quantum dots tuned by double-layer gates
Artificial molecular bonding in Si quantum dots tuned by double-layer gates
A quantum-state-controllable artificial molecular device, which plays an important role in such computation directions as quantum/neural computations, is fabricated from a gate-defined silicon (Si) quantum dots in a Si nanowire formed with complementary metal-oxide-semiconductor field-effect-transistor (MOSFET) technologies.The fabricated device demonstrates a state change, through low-temperature transport measurements,from an ionic-bonding state in isolated dots to a covalent-bonding state in coupled dots; transport simulation in qualitatively good agreement with the experimental result is presented for the isolated-dot case, and differential transconductance is provided so that transport for the coupled-dot case can be well understood.
0003-6951
Li, Z.
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Husain, M.K.
39a98158-3f8d-4977-84fc-79fad405bc60
Liu, F.
beec7ff8-5835-4793-981b-fafd99b52549
Giblin, S.
e17524c9-6baa-4bca-bd5c-fa1215fd4a59
Fletcher, J.
b7ccf16a-7ab1-45a0-bf67-64fd6aa497dc
Kataoka, M.
a29bcc0f-ab52-4812-b81f-994bb04c9ad7
Andreev, A.
a8793d07-f3d1-4ebd-abdc-7f3783631140
Ibukuro, K.
b863054f-39db-4e0e-a2cb-981a86820dda
Hillier, J.
3621050b-74de-4fb7-b1ee-968965966336
Tomita, I.
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Li, Z.
05f14f5e-fc6e-446e-ac52-64be640b5e42
Husain, M.K.
39a98158-3f8d-4977-84fc-79fad405bc60
Liu, F.
beec7ff8-5835-4793-981b-fafd99b52549
Giblin, S.
e17524c9-6baa-4bca-bd5c-fa1215fd4a59
Fletcher, J.
b7ccf16a-7ab1-45a0-bf67-64fd6aa497dc
Kataoka, M.
a29bcc0f-ab52-4812-b81f-994bb04c9ad7
Andreev, A.
a8793d07-f3d1-4ebd-abdc-7f3783631140
Ibukuro, K.
b863054f-39db-4e0e-a2cb-981a86820dda
Hillier, J.
3621050b-74de-4fb7-b1ee-968965966336
Tomita, I.
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Rutt, H.N.
e09fa327-0c01-467a-9898-4e7f0cd715fc
Tsuchiya, Y.
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Li, Z., Husain, M.K., Liu, F., Giblin, S., Fletcher, J., Kataoka, M., Andreev, A., Ibukuro, K., Hillier, J., Tomita, I., Rutt, H.N., Tsuchiya, Y. and Saito, S. (2020) Artificial molecular bonding in Si quantum dots tuned by double-layer gates. Applied Physics Letters.

Record type: Article

Abstract

A quantum-state-controllable artificial molecular device, which plays an important role in such computation directions as quantum/neural computations, is fabricated from a gate-defined silicon (Si) quantum dots in a Si nanowire formed with complementary metal-oxide-semiconductor field-effect-transistor (MOSFET) technologies.The fabricated device demonstrates a state change, through low-temperature transport measurements,from an ionic-bonding state in isolated dots to a covalent-bonding state in coupled dots; transport simulation in qualitatively good agreement with the experimental result is presented for the isolated-dot case, and differential transconductance is provided so that transport for the coupled-dot case can be well understood.

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In preparation date: 7 March 2020

Identifiers

Local EPrints ID: 438652
URI: http://eprints.soton.ac.uk/id/eprint/438652
ISSN: 0003-6951
PURE UUID: cf0d4c32-0b9a-46a9-8bd0-37406fd1ed34
ORCID for F. Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for K. Ibukuro: ORCID iD orcid.org/0000-0002-6546-8873
ORCID for S. Saito: ORCID iD orcid.org/0000-0003-1539-1182

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Date deposited: 20 Mar 2020 17:30
Last modified: 19 May 2020 00:51

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Contributors

Author: Z. Li
Author: M.K. Husain
Author: F. Liu ORCID iD
Author: S. Giblin
Author: J. Fletcher
Author: M. Kataoka
Author: A. Andreev
Author: K. Ibukuro ORCID iD
Author: J. Hillier
Author: I. Tomita
Author: H.N. Rutt
Author: Y. Tsuchiya
Author: S. Saito ORCID iD

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