The University of Southampton
University of Southampton Institutional Repository

Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions

Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions
Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.

ferroelectrics, lithography, piezoelectric force microscopy, polymers, tunnel junctions
1-7
Kumar, Manasvi
0386ecdb-ae88-45fd-858b-8b15ab4d7408
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
Seitkhan, Akmaral
abff3110-c149-4e8d-ba1e-e3e65ae44874
Loganathan, Kalaivanan
a1ed4ee0-9f34-4468-bcd0-caf2a63f4c20
Yengel, Emre
a77f6e1e-dc40-47d5-8d5e-cd05133b09c7
Faber, Hendrik
aa0a08c8-5828-4213-a07c-7be87bcdb12a
Naphade, Dipti
ed60b22a-be44-4296-9357-21846147c7b6
Basu, Aniruddha
23ad7b1d-579f-41c3-8605-15abd0f5208f
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9
Asadi, Kamal
94274fcd-6c51-4725-9649-e53df95eedb3
Kumar, Manasvi
0386ecdb-ae88-45fd-858b-8b15ab4d7408
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
Seitkhan, Akmaral
abff3110-c149-4e8d-ba1e-e3e65ae44874
Loganathan, Kalaivanan
a1ed4ee0-9f34-4468-bcd0-caf2a63f4c20
Yengel, Emre
a77f6e1e-dc40-47d5-8d5e-cd05133b09c7
Faber, Hendrik
aa0a08c8-5828-4213-a07c-7be87bcdb12a
Naphade, Dipti
ed60b22a-be44-4296-9357-21846147c7b6
Basu, Aniruddha
23ad7b1d-579f-41c3-8605-15abd0f5208f
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9
Asadi, Kamal
94274fcd-6c51-4725-9649-e53df95eedb3

Kumar, Manasvi, Georgiadou, Dimitra G., Seitkhan, Akmaral, Loganathan, Kalaivanan, Yengel, Emre, Faber, Hendrik, Naphade, Dipti, Basu, Aniruddha, Anthopoulos, Thomas D. and Asadi, Kamal (2020) Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions. Advanced Electronic Materials, 6 (2), 1-7, [1901091]. (doi:10.1002/aelm.201901091).

Record type: Article

Abstract

Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.

Text
aelm.201901091 - Version of Record
Available under License Creative Commons Attribution.
Download (1MB)

More information

Accepted/In Press date: 9 December 2019
e-pub ahead of print date: 19 December 2019
Published date: 13 February 2020
Keywords: ferroelectrics, lithography, piezoelectric force microscopy, polymers, tunnel junctions

Identifiers

Local EPrints ID: 439736
URI: http://eprints.soton.ac.uk/id/eprint/439736
PURE UUID: 5d3f8cd5-28d7-48ed-87b2-c2dec80bec72
ORCID for Dimitra G. Georgiadou: ORCID iD orcid.org/0000-0002-2620-3346

Catalogue record

Date deposited: 30 Apr 2020 16:35
Last modified: 07 Oct 2020 02:27

Export record

Altmetrics

Contributors

Author: Manasvi Kumar
Author: Akmaral Seitkhan
Author: Kalaivanan Loganathan
Author: Emre Yengel
Author: Hendrik Faber
Author: Dipti Naphade
Author: Aniruddha Basu
Author: Thomas D. Anthopoulos
Author: Kamal Asadi

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×