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Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions

Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions
Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.

ferroelectrics, lithography, piezoelectric force microscopy, polymers, tunnel junctions
1-7
Kumar, Manasvi
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Georgiadou, Dimitra G.
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Seitkhan, Akmaral
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Loganathan, Kalaivanan
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Yengel, Emre
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Faber, Hendrik
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Naphade, Dipti
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Basu, Aniruddha
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Anthopoulos, Thomas D.
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Asadi, Kamal
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Kumar, Manasvi
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Georgiadou, Dimitra G.
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Seitkhan, Akmaral
abff3110-c149-4e8d-ba1e-e3e65ae44874
Loganathan, Kalaivanan
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Yengel, Emre
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Faber, Hendrik
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Naphade, Dipti
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Basu, Aniruddha
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Anthopoulos, Thomas D.
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Asadi, Kamal
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Kumar, Manasvi, Georgiadou, Dimitra G., Seitkhan, Akmaral, Loganathan, Kalaivanan, Yengel, Emre, Faber, Hendrik, Naphade, Dipti, Basu, Aniruddha, Anthopoulos, Thomas D. and Asadi, Kamal (2020) Colossal tunneling electroresistance in co-planar polymer ferroelectric tunnel junctions. Advanced Electronic Materials, 6 (2), 1-7, [1901091]. (doi:10.1002/aelm.201901091).

Record type: Article

Abstract

Ferroelectric tunnel junctions (FTJs) are ideal resistance-switching devices due to their deterministic behavior and operation at low voltages. However, FTJs have remained mostly as a scientific curiosity due to three critical issues: lack of rectification in their current-voltage characteristic, small tunneling electroresistance (TER) effect, and absence of a straightforward lithography-based device fabrication method that would allow for their mass production. Co-planar FTJs that are fabricated using wafer-scale adhesion lithography technique are demonstrated, and a bi-stable rectifying behavior with colossal TER approaching 106% at room temperature is exhibited. The FTJs are based on poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)], and employ asymmetric co-planar metallic electrodes separated by <20 nm. The tunneling nature of the charge transport is corroborated using Simmons direct tunneling model. The present work is the first demonstration of functional FTJs manufactured via a scalable lithography-based nano-patterning technique and could pave the way to new and exciting memory device concepts.

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More information

Accepted/In Press date: 9 December 2019
e-pub ahead of print date: 19 December 2019
Published date: 13 February 2020
Keywords: ferroelectrics, lithography, piezoelectric force microscopy, polymers, tunnel junctions

Identifiers

Local EPrints ID: 439736
URI: http://eprints.soton.ac.uk/id/eprint/439736
PURE UUID: 5d3f8cd5-28d7-48ed-87b2-c2dec80bec72
ORCID for Dimitra G. Georgiadou: ORCID iD orcid.org/0000-0002-2620-3346

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Date deposited: 30 Apr 2020 16:35
Last modified: 18 Mar 2024 03:55

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Contributors

Author: Manasvi Kumar
Author: Akmaral Seitkhan
Author: Kalaivanan Loganathan
Author: Emre Yengel
Author: Hendrik Faber
Author: Dipti Naphade
Author: Aniruddha Basu
Author: Thomas D. Anthopoulos
Author: Kamal Asadi

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