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Radio frequency diodes and circuits fabricated via adhesion lithography

Radio frequency diodes and circuits fabricated via adhesion lithography
Radio frequency diodes and circuits fabricated via adhesion lithography
The commercial interest in Radio Frequency Identification (RFID) tags keeps growing, as new application sectors, spanning from healthcare to electronic article surveillance (EAS) and personal identification, are constantly emerging for these types of electronic devices. The increasing demand for the so-called “smart labels” necessitates their high throughput manufacturing, and indeed on thin flexible substrates, that will reduce the cost and render them competitive to the currently widely employed barcodes. Adhesion Lithography (a-Lith) is a novel patterning technique that allows the facile high yield fabrication of co-planar large aspect ratio (<100,000) metal electrodes separated by a sub-20 nm gap on large area substrates of any type. Deposition of high mobility semiconductors from their solution at low, compatible with plastic substrates, temperatures and application of specific processing protocols can dramatically improve the performance of the fabricated Schottky diodes. It will be shown that in this manner both organic and inorganic high speed diodes and rectifiers can be obtained, operating at frequencies much higher than the 13.56 MHz benchmark, currently employed in passive RFID tags and near filed communications (NFC). This showcases the universality of this method towards fabricating high speed p- and n-type diodes, irrespective of the substrate, simply based on the extreme downscaling of key device dimensions obtained in these nanoscale structures. The potential for scaling up this technique at low cost, combined with the significant performance optimisation and improved functionality that can be attained through intelligent material selection, render a-Lith unique within the field of plastic electronics.
99450C
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
Semple, James
44fd17bf-5f7c-4e73-91c1-65be28b1c881
Wyatt-moon, Gwenhivir
f332707a-2026-406a-b32e-2a29d9cf6423
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
Semple, James
44fd17bf-5f7c-4e73-91c1-65be28b1c881
Wyatt-moon, Gwenhivir
f332707a-2026-406a-b32e-2a29d9cf6423
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9

Georgiadou, Dimitra G., Semple, James, Wyatt-moon, Gwenhivir and Anthopoulos, Thomas D. (2016) Radio frequency diodes and circuits fabricated via adhesion lithography. SPIE: Organic Photonics + Electronics, United States. 28 Aug - 01 Sep 2016. 99450C . (doi:10.1117/12.2237746).

Record type: Conference or Workshop Item (Paper)

Abstract

The commercial interest in Radio Frequency Identification (RFID) tags keeps growing, as new application sectors, spanning from healthcare to electronic article surveillance (EAS) and personal identification, are constantly emerging for these types of electronic devices. The increasing demand for the so-called “smart labels” necessitates their high throughput manufacturing, and indeed on thin flexible substrates, that will reduce the cost and render them competitive to the currently widely employed barcodes. Adhesion Lithography (a-Lith) is a novel patterning technique that allows the facile high yield fabrication of co-planar large aspect ratio (<100,000) metal electrodes separated by a sub-20 nm gap on large area substrates of any type. Deposition of high mobility semiconductors from their solution at low, compatible with plastic substrates, temperatures and application of specific processing protocols can dramatically improve the performance of the fabricated Schottky diodes. It will be shown that in this manner both organic and inorganic high speed diodes and rectifiers can be obtained, operating at frequencies much higher than the 13.56 MHz benchmark, currently employed in passive RFID tags and near filed communications (NFC). This showcases the universality of this method towards fabricating high speed p- and n-type diodes, irrespective of the substrate, simply based on the extreme downscaling of key device dimensions obtained in these nanoscale structures. The potential for scaling up this technique at low cost, combined with the significant performance optimisation and improved functionality that can be attained through intelligent material selection, render a-Lith unique within the field of plastic electronics.

Full text not available from this repository.

More information

Published date: 7 November 2016
Venue - Dates: SPIE: Organic Photonics + Electronics, United States, 2016-08-28 - 2016-09-01

Identifiers

Local EPrints ID: 440491
URI: http://eprints.soton.ac.uk/id/eprint/440491
PURE UUID: 362a5859-393d-4481-a968-acda83c99a3d
ORCID for Dimitra G. Georgiadou: ORCID iD orcid.org/0000-0002-2620-3346

Catalogue record

Date deposited: 05 May 2020 16:42
Last modified: 25 Aug 2020 01:51

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Contributors

Author: James Semple
Author: Gwenhivir Wyatt-moon
Author: Thomas D. Anthopoulos

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