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The role of metal/metal oxide/organic anode interfaces in efficiency and stability of bulk heterojunction organic photodetectors

The role of metal/metal oxide/organic anode interfaces in efficiency and stability of bulk heterojunction organic photodetectors
The role of metal/metal oxide/organic anode interfaces in efficiency and stability of bulk heterojunction organic photodetectors

We demonstrate a transition metal oxide based hole extraction layer approach to improve the efficiency, dark current and time stability of organic photodetectors (OPDs). A significant increase in device efficiency and over two orders of magnitude lower dark current at a bias voltage of -0.5 V were obtained in OPDs based on the poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71 butyric acid methyl ester (PC71BM) bulk heterojunctions (BHJ). This was achieved by introducing an under-stoichiometric tungsten oxide layer, after optimizing its thickness to 10 nm, at the anode/organic layer interface instead of the commonly used poly(styrenesulfonate)-doped poly(ethylenedioxythiophene) (PEDOT:PSS). The increased efficiency and lower dark current were attributed to the formation of a favorable interfacial dipole and the reduction in the device series resistance, when PEDOT:PSS was replaced by these metal oxide layers.

Anode interlayer, Organic photodetectors, Tungsten oxide, Under-stoichiometric
0167-9317
13-17
Soultati, A.
75205fde-50fc-473e-ad72-ab0b3c6b2cb9
Georgiadou, D. G.
84977176-3678-4fb3-a3dd-2044a49c853b
Douvas, A.
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Argitis, P.
ab9c4ea6-3dd2-4e34-935d-81bfb360f358
Alexandropoulos, D.
5d40cac5-30a4-4577-a2df-f26a8e5390fb
Vainos, N. A.
3288f903-d80b-4b39-9042-26106eb3f064
Stathopoulos, N. A.
83a4653f-c4c8-464a-8ed1-a93c52cf3833
Papadimitropoulos, G.
b4f1ecba-cc8a-4882-99a5-a29354a9bca7
Davazoglou, D.
a946cf5d-287a-4734-ba55-b180ab4525ed
Vasilopoulou, M.
aad1381e-d091-4090-8c7c-b74bed22393d
Soultati, A.
75205fde-50fc-473e-ad72-ab0b3c6b2cb9
Georgiadou, D. G.
84977176-3678-4fb3-a3dd-2044a49c853b
Douvas, A.
2e088659-e1b3-4723-aff9-4dfe385579b5
Argitis, P.
ab9c4ea6-3dd2-4e34-935d-81bfb360f358
Alexandropoulos, D.
5d40cac5-30a4-4577-a2df-f26a8e5390fb
Vainos, N. A.
3288f903-d80b-4b39-9042-26106eb3f064
Stathopoulos, N. A.
83a4653f-c4c8-464a-8ed1-a93c52cf3833
Papadimitropoulos, G.
b4f1ecba-cc8a-4882-99a5-a29354a9bca7
Davazoglou, D.
a946cf5d-287a-4734-ba55-b180ab4525ed
Vasilopoulou, M.
aad1381e-d091-4090-8c7c-b74bed22393d

Soultati, A., Georgiadou, D. G., Douvas, A., Argitis, P., Alexandropoulos, D., Vainos, N. A., Stathopoulos, N. A., Papadimitropoulos, G., Davazoglou, D. and Vasilopoulou, M. (2014) The role of metal/metal oxide/organic anode interfaces in efficiency and stability of bulk heterojunction organic photodetectors. Microelectronic Engineering, 117, 13-17. (doi:10.1016/j.mee.2013.12.008).

Record type: Article

Abstract

We demonstrate a transition metal oxide based hole extraction layer approach to improve the efficiency, dark current and time stability of organic photodetectors (OPDs). A significant increase in device efficiency and over two orders of magnitude lower dark current at a bias voltage of -0.5 V were obtained in OPDs based on the poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C71 butyric acid methyl ester (PC71BM) bulk heterojunctions (BHJ). This was achieved by introducing an under-stoichiometric tungsten oxide layer, after optimizing its thickness to 10 nm, at the anode/organic layer interface instead of the commonly used poly(styrenesulfonate)-doped poly(ethylenedioxythiophene) (PEDOT:PSS). The increased efficiency and lower dark current were attributed to the formation of a favorable interfacial dipole and the reduction in the device series resistance, when PEDOT:PSS was replaced by these metal oxide layers.

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More information

Accepted/In Press date: 5 December 2013
e-pub ahead of print date: 12 December 2013
Published date: 1 April 2014
Keywords: Anode interlayer, Organic photodetectors, Tungsten oxide, Under-stoichiometric

Identifiers

Local EPrints ID: 440492
URI: http://eprints.soton.ac.uk/id/eprint/440492
ISSN: 0167-9317
PURE UUID: f35f118b-5248-416e-a643-4a9eb24f14fa
ORCID for D. G. Georgiadou: ORCID iD orcid.org/0000-0002-2620-3346

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Date deposited: 05 May 2020 16:42
Last modified: 07 Oct 2020 02:27

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Contributors

Author: A. Soultati
Author: A. Douvas
Author: P. Argitis
Author: D. Alexandropoulos
Author: N. A. Vainos
Author: N. A. Stathopoulos
Author: G. Papadimitropoulos
Author: D. Davazoglou
Author: M. Vasilopoulou

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