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Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature

Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature
Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature
While the importance of atomic-scale features in silicon-based device for quantum application has been recognised and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we report random telegraph signals (RTSs) originated from trapping and detrapping of an electron at a donor in the substrate of a p-type Metal-Oxide-Semiconductor Field- Effect-Transistor (MOSFET). RTSs, not seen when the substrate was grounded, were observed when a positive bias was applied to the substrate. The comprehensive study on the signals observed reveals that the nature of the RTSs is discrete threshold voltage variations due to the change in depletion layer width depending on the charge state of a single dopant, neutral or positively charged.
2158-3226
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Hillier, Joseph William
3621050b-74de-4fb7-b1ee-968965966336
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Ibukuro, Kouta
b863054f-39db-4e0e-a2cb-981a86820dda
Hillier, Joseph William
3621050b-74de-4fb7-b1ee-968965966336
Liu, Fayong
beec7ff8-5835-4793-981b-fafd99b52549
Husain, Muhammad K.
92db1f76-6760-4cf2-8e30-5d4a602fe15b
Li, Zuo
05f14f5e-fc6e-446e-ac52-64be640b5e42
Tomita, Isao
e4a78ed2-f525-4fb0-9711-86e2b2dd5587
Tsuchiya, Yoshishige
5a5178c6-b3a9-4e07-b9b2-9a28e49f1dc2
Rutt, Harvey
e09fa327-0c01-467a-9898-4e7f0cd715fc
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc

Ibukuro, Kouta, Hillier, Joseph William, Liu, Fayong, Husain, Muhammad K., Li, Zuo, Tomita, Isao, Tsuchiya, Yoshishige, Rutt, Harvey and Saito, Shinichi (2020) Random telegraph signals caused by a single dopant in a metal oxide semiconductor field effect transistor at low temperature. AIP Advances. (In Press)

Record type: Article

Abstract

While the importance of atomic-scale features in silicon-based device for quantum application has been recognised and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we report random telegraph signals (RTSs) originated from trapping and detrapping of an electron at a donor in the substrate of a p-type Metal-Oxide-Semiconductor Field- Effect-Transistor (MOSFET). RTSs, not seen when the substrate was grounded, were observed when a positive bias was applied to the substrate. The comprehensive study on the signals observed reveals that the nature of the RTSs is discrete threshold voltage variations due to the change in depletion layer width depending on the charge state of a single dopant, neutral or positively charged.

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In preparation date: 6 January 2020
Accepted/In Press date: 6 May 2020

Identifiers

Local EPrints ID: 440519
URI: http://eprints.soton.ac.uk/id/eprint/440519
ISSN: 2158-3226
PURE UUID: fd407853-a46c-46f5-ab2d-8def0f7d1bee
ORCID for Kouta Ibukuro: ORCID iD orcid.org/0000-0002-6546-8873
ORCID for Fayong Liu: ORCID iD orcid.org/0000-0003-4443-9720
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

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Date deposited: 06 May 2020 16:31
Last modified: 07 May 2020 00:40

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