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Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing

Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing
Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing

We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanostructured p-Si/n-ZnO heterojunction. We characterized the structural, optical, and electrical properties of the heterojunction. Electrical I-V measurements on the nanostructured p-Si/n-ZnO device show non-linear electric characteristics with a diode-like behavior. Electrical I-V measurements on a flat p-Si/n-ZnO reference sample show similar characteristics, however the forward current and rectification ratio are improved by orders of magnitude in the nanostructured device owing to its increased surface area. The fabrication method employed in this work can be extended to other homojunctions or heterojunctions for electronic and optoelectronic devices with large surface area.

Heterojunction, Nanostructure, Scalable fabrication, ZnO
1-9
Georgiadou, D. G.
84977176-3678-4fb3-a3dd-2044a49c853b
Ulmeanu, M.
ba09ab4e-6bcc-4357-8700-d8c49b16eef0
Kompitsas, M.
ff0eebb5-2328-497a-8260-c0e1e15ece8e
Argitis, P.
ab9c4ea6-3dd2-4e34-935d-81bfb360f358
Kandyla, M.
2e387d7b-d085-40c9-af28-0cd33a8556ee
Georgiadou, D. G.
84977176-3678-4fb3-a3dd-2044a49c853b
Ulmeanu, M.
ba09ab4e-6bcc-4357-8700-d8c49b16eef0
Kompitsas, M.
ff0eebb5-2328-497a-8260-c0e1e15ece8e
Argitis, P.
ab9c4ea6-3dd2-4e34-935d-81bfb360f358
Kandyla, M.
2e387d7b-d085-40c9-af28-0cd33a8556ee

Georgiadou, D. G., Ulmeanu, M., Kompitsas, M., Argitis, P. and Kandyla, M. (2014) Scalable fabrication of nanostructured p-Si/n-ZnO heterojunctions by femtosecond-laser processing. Materials Research Express, 1 (4), 1-9, [045902]. (doi:10.1088/2053-1591/1/4/045902).

Record type: Article

Abstract

We present a versatile, large-scale fabrication method for nanostructured semiconducting junctions. Silicon substrates were processed by femtosecond laser pulses in methanol and a quasi-ordered distribution of columnar nanospikes was formed on the surface of the substrates. A thin (80 nm) layer of ZnO was deposited on the laser-processed silicon surface by pulsed laser deposition, forming a nanostructured p-Si/n-ZnO heterojunction. We characterized the structural, optical, and electrical properties of the heterojunction. Electrical I-V measurements on the nanostructured p-Si/n-ZnO device show non-linear electric characteristics with a diode-like behavior. Electrical I-V measurements on a flat p-Si/n-ZnO reference sample show similar characteristics, however the forward current and rectification ratio are improved by orders of magnitude in the nanostructured device owing to its increased surface area. The fabrication method employed in this work can be extended to other homojunctions or heterojunctions for electronic and optoelectronic devices with large surface area.

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More information

Accepted/In Press date: 15 September 2014
e-pub ahead of print date: 15 October 2014
Keywords: Heterojunction, Nanostructure, Scalable fabrication, ZnO

Identifiers

Local EPrints ID: 440525
URI: http://eprints.soton.ac.uk/id/eprint/440525
PURE UUID: d11d7bea-3acc-4ac0-9279-27585c366770
ORCID for D. G. Georgiadou: ORCID iD orcid.org/0000-0002-2620-3346

Catalogue record

Date deposited: 06 May 2020 16:31
Last modified: 07 May 2020 00:47

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Contributors

Author: M. Ulmeanu
Author: M. Kompitsas
Author: P. Argitis
Author: M. Kandyla

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