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Semiconductor-free nonvolatile resistive switching memory devices based on metal nanogaps fabricated on flexible substrates via adhesion lithography

Semiconductor-free nonvolatile resistive switching memory devices based on metal nanogaps fabricated on flexible substrates via adhesion lithography
Semiconductor-free nonvolatile resistive switching memory devices based on metal nanogaps fabricated on flexible substrates via adhesion lithography

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios > 104 and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

Flexible electronics, nanogap electrodes, nonvolatile memory, resistive switching
0018-9383
1973-1980
Semple, James
44fd17bf-5f7c-4e73-91c1-65be28b1c881
Wyatt-Moon, Gwenhivir
f332707a-2026-406a-b32e-2a29d9cf6423
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
McLachlan, Martyn A.
8cdefe50-9bd2-4ed5-81da-c5ebbfd9e2b1
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9
Semple, James
44fd17bf-5f7c-4e73-91c1-65be28b1c881
Wyatt-Moon, Gwenhivir
f332707a-2026-406a-b32e-2a29d9cf6423
Georgiadou, Dimitra G.
84977176-3678-4fb3-a3dd-2044a49c853b
McLachlan, Martyn A.
8cdefe50-9bd2-4ed5-81da-c5ebbfd9e2b1
Anthopoulos, Thomas D.
d6ee9390-d991-4277-a721-030f22d614c9

Semple, James, Wyatt-Moon, Gwenhivir, Georgiadou, Dimitra G., McLachlan, Martyn A. and Anthopoulos, Thomas D. (2017) Semiconductor-free nonvolatile resistive switching memory devices based on metal nanogaps fabricated on flexible substrates via adhesion lithography. IEEE Transactions on Electron Devices, 64 (5), 1973-1980, [7803587]. (doi:10.1109/TED.2016.2638499).

Record type: Article

Abstract

Electronic memory cells are of critical importance in modern-day computing devices, including emerging technology sectors such as large-area printed electronics. One technology that has being receiving significant interest in recent years is resistive switching primarily due to its low dimensionality and nonvolatility. Here, we describe the development of resistive switching memory device arrays based on empty aluminum nanogap electrodes. By employing adhesion lithography, a low-temperature and large-area compatible nanogap fabrication technique, dense arrays of memory devices are demonstrated on both rigid and flexible plastic substrates. As-prepared devices exhibit nonvolatile memory operation with stable endurance, resistance ratios > 104 and retention times of several months. An intermittent analysis of the electrode microstructure reveals that controlled resistive switching is due to migration of metal from the electrodes into the nanogap under the application of an external electric field. This alternative form of resistive random access memory is promising for use in emerging sectors such as large-area electronics as well as in electronics for harsh environments, e.g., space, high/low temperature, magnetic influences, radiation, vibration, and pressure.

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More information

Published date: 2 January 2017
Keywords: Flexible electronics, nanogap electrodes, nonvolatile memory, resistive switching

Identifiers

Local EPrints ID: 440527
URI: http://eprints.soton.ac.uk/id/eprint/440527
ISSN: 0018-9383
PURE UUID: 8d4b358a-c252-4c20-84bb-0c25fb33b495
ORCID for Dimitra G. Georgiadou: ORCID iD orcid.org/0000-0002-2620-3346

Catalogue record

Date deposited: 06 May 2020 16:31
Last modified: 07 Oct 2020 02:27

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Contributors

Author: James Semple
Author: Gwenhivir Wyatt-Moon
Author: Martyn A. McLachlan
Author: Thomas D. Anthopoulos

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