Deep ultraviolet copper(I) thiocyanate (CuSCN) photodetectors based on coplanar nanogap electrodes fabricated via adhesion lithography

Wyatt-Moon, Gwenhivir, Georgiadou, Dimitra G., Semple, James and Anthopoulos, Thomas D. (2017) Deep ultraviolet copper(I) thiocyanate (CuSCN) photodetectors based on coplanar nanogap electrodes fabricated via adhesion lithography. ACS Applied Materials and Interfaces, 9 (48), 41965-41972. (doi:10.1021/acsami.7b12942).

Abstract

Adhesion lithography (a-Lith) is a versatile fabrication technique used to produce asymmetric coplanar electrodes separated by a <15 nm nanogap. Here, we use a-Lith to fabricate deep ultraviolet (DUV) photodetectors by combining coplanar asymmetric nanogap electrode architectures (Au/Al) with solution-processable wide-band-gap (3.5-3.9 eV) p-type semiconductor copper(I) thiocyanate (CuSCN). Because of the device's unique architecture, the detectors exhibit high responsivity (≈79 A W^-1) and photosensitivity (≈720) when illuminated with a DUV-range (λ_peak = 280 nm) light-emitting diode at 220 μW cm^-2. Interestingly, the photosensitivity of the photodetectors remains fairly high (≈7) even at illuminating intensities down to 0.2 μW cm^-2. The scalability of the a-Lith process combined with the unique properties of CuSCN paves the way to new forms of inexpensive, yet high-performance, photodetectors that can be manufactured on arbitrary substrate materials including plastic.

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Contributors

Author: Dimitra G. Georgiadou

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