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Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications

Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications
Surface oxidation employing neutral oxygen irradiation significantly improves the switching and synaptic performance of ZnO-based transparent memristor devices. The endurance of the as-irradiated deviceis increased by 100 times, and the operating current can be lowered by 10 times as compared with the as-deposited device. Moreover, the performance-enhanced device has an excellent analog behavior that can exhibit 3-bits per cell nonvolatile multistate characteristics and perform 15 stable epochs ofsynaptic operations with highly linear weight updates. A simulated artificial neural network comprising 1600 synapses confirms the superiority of the enhanced device in processing a 40 × 40 pixels grayscale image. The irradiation effectively decreases the concentration of oxygen vacancy donor defects and promotes oxygen interstitial acceptor defects on the surface of the ZnO films, which consequently modulate the redox process during rupture and rejuvenation of the filament. This work not only proposes the potential of ZnO-based memristor devices for high-density invisible data storage and in-memory computing application but also offers valuable insight in designing high-performance memristor devices, regardless of the oxide system used, by taking advantage of our neutral oxygen irradiation technique.
0957-4484
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990

Simanjuntak, Firman Mangasa, Ohno, Takeo, Chandrasekaran, Sridhar, Tseng, Tseung-Yuen and Samukawa, Seiji (2020) Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications. Nanotechnology, 31 (26). (doi:10.1088/1361-6528/ab7fcf/meta).

Record type: Article

Abstract

Surface oxidation employing neutral oxygen irradiation significantly improves the switching and synaptic performance of ZnO-based transparent memristor devices. The endurance of the as-irradiated deviceis increased by 100 times, and the operating current can be lowered by 10 times as compared with the as-deposited device. Moreover, the performance-enhanced device has an excellent analog behavior that can exhibit 3-bits per cell nonvolatile multistate characteristics and perform 15 stable epochs ofsynaptic operations with highly linear weight updates. A simulated artificial neural network comprising 1600 synapses confirms the superiority of the enhanced device in processing a 40 × 40 pixels grayscale image. The irradiation effectively decreases the concentration of oxygen vacancy donor defects and promotes oxygen interstitial acceptor defects on the surface of the ZnO films, which consequently modulate the redox process during rupture and rejuvenation of the filament. This work not only proposes the potential of ZnO-based memristor devices for high-density invisible data storage and in-memory computing application but also offers valuable insight in designing high-performance memristor devices, regardless of the oxide system used, by taking advantage of our neutral oxygen irradiation technique.

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Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applications - Accepted Manuscript
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Accepted/In Press date: 13 March 2020
e-pub ahead of print date: 20 April 2020

Identifiers

Local EPrints ID: 441057
URI: http://eprints.soton.ac.uk/id/eprint/441057
ISSN: 0957-4484
PURE UUID: 9ad13339-1c3c-4539-8562-06d29b20a8c4

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Date deposited: 28 May 2020 16:58
Last modified: 26 Nov 2021 05:38

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Takeo Ohno
Author: Sridhar Chandrasekaran
Author: Tseung-Yuen Tseng
Author: Seiji Samukawa

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