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The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE

The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE
The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE
Photoluminescence (PL) measurements on Ga0.52In0.48P and Al0.18Ga0.34In0.48, P alloys, grown by metalorganic vapor phase epitaxy (MOVPE) on GaAs, have been made as a function of pressure up to about 4.5 GPa at 77 K. The substrates are oriented on the (100) and off the (100) plane toward [011] and [011¯] by up to 25°. The band-gap energy anomaly in the CuPt-type ordered structure has been systematically investigated at high pressures. With increasing pressure the E0 band gap shows a sublinear shift toward higher energies. For some samples, this shift tends to saturate, of the PL peak shows a decrease in energy with pressure. The pressures needed for these observations are found to be significantly smaller in AlGaInP than in GaInP. The observed behaviors strongly depend on substrate misorientation, and hence reflect the degree of ordering in these alloys. These results clearly demonstrate the importance of the effects of repulsion between the G-folded energy states on the optical spectra in the CuPt-type ordered structure. Possible explanations for some of the trends in high-pressure behavior of the E0 direct band gap in GaInP and AlGaInP samples having different degrees of ordering are discussed, including the modification of the ordinary G-X crossover upon ordering.
0022-3697
311-317
Kobayashi, T.
088803ac-828c-4f7e-8825-7c93ca9e2511
Kojima, H.
b6b66552-18ad-4f9f-9c13-01ecafa9ad3f
Deol, R.S.
804c55d3-704c-4752-b620-0d86b45871dd
Buchan, N.
01b7c852-cb37-4a17-99fe-810568b90fcf
Heuberger, W.
d2e3bb98-0eb3-4bdb-8ea0-98dece5f0311
Jakubowicz, A.
cb264d06-169a-4ad3-b62a-3acdb5b4324d
Roentgen, P.
80b54d29-dfcb-4e50-90cc-6bec8b6196fa
Kobayashi, T.
088803ac-828c-4f7e-8825-7c93ca9e2511
Kojima, H.
b6b66552-18ad-4f9f-9c13-01ecafa9ad3f
Deol, R.S.
804c55d3-704c-4752-b620-0d86b45871dd
Buchan, N.
01b7c852-cb37-4a17-99fe-810568b90fcf
Heuberger, W.
d2e3bb98-0eb3-4bdb-8ea0-98dece5f0311
Jakubowicz, A.
cb264d06-169a-4ad3-b62a-3acdb5b4324d
Roentgen, P.
80b54d29-dfcb-4e50-90cc-6bec8b6196fa

Kobayashi, T., Kojima, H., Deol, R.S., Buchan, N., Heuberger, W., Jakubowicz, A. and Roentgen, P. (1995) The effect of pressure on the band-gap energy in ordered GaInP and AlGaInP grown by MOVPE. Journal of Physics and Chemistry of Solids, 56 (3-4), 311-317. (doi:10.1016/0022-3697(94)00199-5).

Record type: Article

Abstract

Photoluminescence (PL) measurements on Ga0.52In0.48P and Al0.18Ga0.34In0.48, P alloys, grown by metalorganic vapor phase epitaxy (MOVPE) on GaAs, have been made as a function of pressure up to about 4.5 GPa at 77 K. The substrates are oriented on the (100) and off the (100) plane toward [011] and [011¯] by up to 25°. The band-gap energy anomaly in the CuPt-type ordered structure has been systematically investigated at high pressures. With increasing pressure the E0 band gap shows a sublinear shift toward higher energies. For some samples, this shift tends to saturate, of the PL peak shows a decrease in energy with pressure. The pressures needed for these observations are found to be significantly smaller in AlGaInP than in GaInP. The observed behaviors strongly depend on substrate misorientation, and hence reflect the degree of ordering in these alloys. These results clearly demonstrate the importance of the effects of repulsion between the G-folded energy states on the optical spectra in the CuPt-type ordered structure. Possible explanations for some of the trends in high-pressure behavior of the E0 direct band gap in GaInP and AlGaInP samples having different degrees of ordering are discussed, including the modification of the ordinary G-X crossover upon ordering.

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Published date: March 1995

Identifiers

Local EPrints ID: 441523
URI: http://eprints.soton.ac.uk/id/eprint/441523
ISSN: 0022-3697
PURE UUID: 9f17a56d-2578-4f57-9945-41bf2e3b1de7

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Date deposited: 17 Jun 2020 16:30
Last modified: 17 Jun 2020 16:30

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