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High-contrast 40 Gb/s operation of a 500 µm long silicon carrier-depletion slow wave modulator

High-contrast 40 Gb/s operation of a 500 µm long silicon carrier-depletion slow wave modulator
High-contrast 40 Gb/s operation of a 500 µm long silicon carrier-depletion slow wave modulator
In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon slow wave modulator based on a traveling-wave Mach-Zehnder interferometer with two 500 µm long slow wave phase shifters. 40 Gb/s operation with 6.6 dB extinction ratio at quadrature and with an on-chip insertion loss of only 6 dB is shown. These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect.
0146-9592
3504-3506
Brimont, A.
b0cb00ac-0328-4225-b813-b27732baebf2
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Fédéli, J.M.
5ba34ada-2ef1-443e-928a-0d5ff5b2bc11
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Martí, J.
76c04871-ed8b-4843-a0af-ad5096b09455
Sanchis, P.
a99dd0e8-6810-42dc-abed-f8a4ae52360e
Brimont, A.
b0cb00ac-0328-4225-b813-b27732baebf2
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Fédéli, J.M.
5ba34ada-2ef1-443e-928a-0d5ff5b2bc11
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Martí, J.
76c04871-ed8b-4843-a0af-ad5096b09455
Sanchis, P.
a99dd0e8-6810-42dc-abed-f8a4ae52360e

Brimont, A., Thomson, D.J., Gardes, F.Y., Fédéli, J.M., Reed, G.T., Martí, J. and Sanchis, P. (2012) High-contrast 40 Gb/s operation of a 500 µm long silicon carrier-depletion slow wave modulator. Optics Letters, 37 (17), 3504-3506. (doi:10.1364/OL.37.003504).

Record type: Article

Abstract

In this Letter, we demonstrate a highly efficient, compact, high-contrast and low-loss silicon slow wave modulator based on a traveling-wave Mach-Zehnder interferometer with two 500 µm long slow wave phase shifters. 40 Gb/s operation with 6.6 dB extinction ratio at quadrature and with an on-chip insertion loss of only 6 dB is shown. These results confirm the benefits of slow light as a means to enhance the performance of silicon modulators based on the plasma dispersion effect.

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Published date: 6 July 2012

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Local EPrints ID: 441539
URI: http://eprints.soton.ac.uk/id/eprint/441539
ISSN: 0146-9592
PURE UUID: 18331672-e966-4ea9-8284-e972efa73398

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Date deposited: 17 Jun 2020 16:30
Last modified: 28 Jul 2020 16:43

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Contributors

Author: A. Brimont
Author: D.J. Thomson
Author: F.Y. Gardes
Author: J.M. Fédéli
Author: G.T. Reed
Author: J. Martí
Author: P. Sanchis

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