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Analysis of silicon germanium standards for the quantification of SiGe microelectronic devices using AES

Analysis of silicon germanium standards for the quantification of SiGe microelectronic devices using AES
Analysis of silicon germanium standards for the quantification of SiGe microelectronic devices using AES
Four samples of well-defined silicon-germanium alloys were used as standards for calibration purposes to allow accurate quantification of silicon-germanium-on-insulator (SGOI) microelectronic devices using Auger electron spectroscopy. Narrow Si KLL and the Ge LMM, high resolution Si KL2,3L2,3 and Ge L3M4,5M4,5 together with survey spectra were collected and are presented from each sample. A matrix effect was observed for silicon in germanium and calculated as 0.85 and 0.95 for the Ge77.5Si22.5 and Ge52.4Si47.6 alloys respectively.
32-46
Mallinson, C.F.
f2372d62-5bbd-445b-b40e-4a62db5d9f2f
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Castle, J.E.
ebcabfad-a0ed-44d9-bf18-cde9dca2203a
Watts, J.F.
0f494cac-684c-427f-855d-2f91b5d7f0f3
Mallinson, C.F.
f2372d62-5bbd-445b-b40e-4a62db5d9f2f
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Castle, J.E.
ebcabfad-a0ed-44d9-bf18-cde9dca2203a
Watts, J.F.
0f494cac-684c-427f-855d-2f91b5d7f0f3

Mallinson, C.F., Littlejohns, C.G., Gardes, F.Y., Castle, J.E. and Watts, J.F. (2015) Analysis of silicon germanium standards for the quantification of SiGe microelectronic devices using AES. Surface Science Spectra, 22 (1), 32-46. (doi:10.1116/11.20141102).

Record type: Article

Abstract

Four samples of well-defined silicon-germanium alloys were used as standards for calibration purposes to allow accurate quantification of silicon-germanium-on-insulator (SGOI) microelectronic devices using Auger electron spectroscopy. Narrow Si KLL and the Ge LMM, high resolution Si KL2,3L2,3 and Ge L3M4,5M4,5 together with survey spectra were collected and are presented from each sample. A matrix effect was observed for silicon in germanium and calculated as 0.85 and 0.95 for the Ge77.5Si22.5 and Ge52.4Si47.6 alloys respectively.

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Published date: 18 March 2015

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Local EPrints ID: 441552
URI: http://eprints.soton.ac.uk/id/eprint/441552
PURE UUID: c8d93519-2e54-4e43-ad31-8284db8716f3

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Date deposited: 17 Jun 2020 16:31
Last modified: 04 Sep 2020 16:33

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Contributors

Author: C.F. Mallinson
Author: F.Y. Gardes
Author: J.E. Castle
Author: J.F. Watts

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