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Emission of diamond NV centers in dielectric, semiconducting and plasmonic environments

Emission of diamond NV centers in dielectric, semiconducting and plasmonic environments
Emission of diamond NV centers in dielectric, semiconducting and plasmonic environments
Nitrogen vacancy (NV) centers in diamond exhibit long coherence lifetimes at room temperature, which renders them ideal candidates for quantum information and sensing applications. The emission characteristics of NV centers demonstrate high sensitivity to a range of stimuli including electric and magnetic fields, dielectric environment, strain, temperature. However, this sensitivity also leads to a strong variation of the emission properties of NV centers in different environments, which complicates the interpretation of experimental observations. Here, we demonstrate that decay rates of NV0 centers in diamond nanoparticles strongly depend on the dielectric environment. Embedding into and placing on dielectric, semiconductor and plasmonic films of subwavelength thickness is investigated by time resolved cathodoluminescence. We also demonstrate that varying the thickness of the thin film can be employed to tune the NV0 center lifetime, as well as the ratio between radiative and non-radiative decay rate.

Our results present a simple route towards tuning the emission of NV0 centers and provide insights into the role of the dielectric environment in the radiative and non-radiative relaxation mechanism of such emitters.
Li, Hao
a7a72307-808b-40bc-aa3b-b0d04f7378ce
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Fedotov, Vassili
3725f5cc-2d0b-4e61-95c5-26d187c84f25
Papasimakis, Nikitas
f416bfa9-544c-4a3e-8a2d-bc1c11133a51
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
Li, Hao
a7a72307-808b-40bc-aa3b-b0d04f7378ce
Ou, Jun-Yu
3fb703e3-b222-46d2-b4ee-75f296d9d64d
Fedotov, Vassili
3725f5cc-2d0b-4e61-95c5-26d187c84f25
Papasimakis, Nikitas
f416bfa9-544c-4a3e-8a2d-bc1c11133a51
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6

Li, Hao, Ou, Jun-Yu, Fedotov, Vassili, Papasimakis, Nikitas and Zheludev, Nikolai (2020) Emission of diamond NV centers in dielectric, semiconducting and plasmonic environments. CLEO 2020 Virtual Conference. 11 - 15 May 2020.

Record type: Conference or Workshop Item (Other)

Abstract

Nitrogen vacancy (NV) centers in diamond exhibit long coherence lifetimes at room temperature, which renders them ideal candidates for quantum information and sensing applications. The emission characteristics of NV centers demonstrate high sensitivity to a range of stimuli including electric and magnetic fields, dielectric environment, strain, temperature. However, this sensitivity also leads to a strong variation of the emission properties of NV centers in different environments, which complicates the interpretation of experimental observations. Here, we demonstrate that decay rates of NV0 centers in diamond nanoparticles strongly depend on the dielectric environment. Embedding into and placing on dielectric, semiconductor and plasmonic films of subwavelength thickness is investigated by time resolved cathodoluminescence. We also demonstrate that varying the thickness of the thin film can be employed to tune the NV0 center lifetime, as well as the ratio between radiative and non-radiative decay rate.

Our results present a simple route towards tuning the emission of NV0 centers and provide insights into the role of the dielectric environment in the radiative and non-radiative relaxation mechanism of such emitters.

Full text not available from this repository.

More information

Published date: 11 May 2020
Venue - Dates: CLEO 2020 Virtual Conference, 2020-05-11 - 2020-05-15

Identifiers

Local EPrints ID: 441605
URI: http://eprints.soton.ac.uk/id/eprint/441605
PURE UUID: c25575c1-ab5f-4ee3-80f3-cefde095f29d
ORCID for Jun-Yu Ou: ORCID iD orcid.org/0000-0001-8028-6130
ORCID for Nikitas Papasimakis: ORCID iD orcid.org/0000-0002-6347-6466
ORCID for Nikolai Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

Catalogue record

Date deposited: 19 Jun 2020 16:30
Last modified: 20 Jun 2020 00:31

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