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Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool

Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool
Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool
Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays that use passive selectors with matrix algebra in MATLAB. The software tool was parallel coded and optimised to run with personal computers and distributed computer clusters with minimised CPU and memory consumption. We study the effect of changing the line resistance, array size, voltage selection scheme, selector diode’s ideality factor, reverse saturation current and sense resistance on the electrical behaviour and expected sense margin of a conventional one-diode-one-resistor crossbar arrays. We then investigate the effect of single- and dual-side array biasing and grounding on the dissipated current throughout the array cells. The tool we offer to the memristor community and the studies we present enable the design of larger and more practical memristor arrays for application in data storage and neuromorphic computing.
1569-8025
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c

Noori, Yasir and De Groot, Cornelis (2020) Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool. Journal of Computational Electronics. (doi:10.1007/s10825-020-01504-7).

Record type: Article

Abstract

Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays that use passive selectors with matrix algebra in MATLAB. The software tool was parallel coded and optimised to run with personal computers and distributed computer clusters with minimised CPU and memory consumption. We study the effect of changing the line resistance, array size, voltage selection scheme, selector diode’s ideality factor, reverse saturation current and sense resistance on the electrical behaviour and expected sense margin of a conventional one-diode-one-resistor crossbar arrays. We then investigate the effect of single- and dual-side array biasing and grounding on the dissipated current throughout the array cells. The tool we offer to the memristor community and the studies we present enable the design of larger and more practical memristor arrays for application in data storage and neuromorphic computing.

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e-pub ahead of print date: 29 May 2020

Identifiers

Local EPrints ID: 441634
URI: http://eprints.soton.ac.uk/id/eprint/441634
ISSN: 1569-8025
PURE UUID: 2fa2c7a1-d312-4ac6-a171-751c305473fe
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779
ORCID for Cornelis De Groot: ORCID iD orcid.org/0000-0002-3850-7101

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Date deposited: 23 Jun 2020 16:30
Last modified: 19 Aug 2020 01:52

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Author: Yasir Noori ORCID iD

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