Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool
Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool
Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays that use passive selectors with matrix algebra in MATLAB. The software tool was parallel coded and optimised to run with personal computers and distributed computer clusters with minimised CPU and memory consumption. We study the effect of changing the line resistance, array size, voltage selection scheme, selector diode’s ideality factor, reverse saturation current and sense resistance on the electrical behaviour and expected sense margin of a conventional one-diode-one-resistor crossbar arrays. We then investigate the effect of single- and dual-side array biasing and grounding on the dissipated current throughout the array cells. The tool we offer to the memristor community and the studies we present enable the design of larger and more practical memristor arrays for application in data storage and neuromorphic computing.
Bit line, Crossbar array, GeSbTe, GeSe, GeTe, Ideality factor, Lambert-W function, Line resistance, Memristor, Neural networks, Neuromorphic computing, Phase change memory, Reverse saturation current, Selector device, Sense margin, Sense resistor, Word line
1203-1214
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
1 September 2020
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
De Groot, Cornelis
92cd2e02-fcc4-43da-8816-c86f966be90c
Noori, Yasir and De Groot, Cornelis
(2020)
Modelling resistive and phase‑change memory with passive selector arrays: a MATLAB tool.
Journal of Computational Electronics, 19 (3), .
(doi:10.1007/s10825-020-01504-7).
Abstract
Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays that use passive selectors with matrix algebra in MATLAB. The software tool was parallel coded and optimised to run with personal computers and distributed computer clusters with minimised CPU and memory consumption. We study the effect of changing the line resistance, array size, voltage selection scheme, selector diode’s ideality factor, reverse saturation current and sense resistance on the electrical behaviour and expected sense margin of a conventional one-diode-one-resistor crossbar arrays. We then investigate the effect of single- and dual-side array biasing and grounding on the dissipated current throughout the array cells. The tool we offer to the memristor community and the studies we present enable the design of larger and more practical memristor arrays for application in data storage and neuromorphic computing.
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Modelling resistive and phase‑change memory
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modelling resistive and phase‑change memory with passive selector arrays: a matlab tool
More information
e-pub ahead of print date: 29 May 2020
Published date: 1 September 2020
Additional Information:
Funding Information:
This work was funded by the EPSRC programme grant ADEPT – Advanced Devices by ElectroPlaTing, EPSRC reference: EP/N035437/1.
Publisher Copyright:
© 2020, The Author(s).
Keywords:
Bit line, Crossbar array, GeSbTe, GeSe, GeTe, Ideality factor, Lambert-W function, Line resistance, Memristor, Neural networks, Neuromorphic computing, Phase change memory, Reverse saturation current, Selector device, Sense margin, Sense resistor, Word line
Identifiers
Local EPrints ID: 441634
URI: http://eprints.soton.ac.uk/id/eprint/441634
ISSN: 1569-8025
PURE UUID: 2fa2c7a1-d312-4ac6-a171-751c305473fe
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Date deposited: 23 Jun 2020 16:30
Last modified: 17 Mar 2024 03:52
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Author:
Yasir Noori
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