The University of Southampton
University of Southampton Institutional Repository

Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films

Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films
Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films
Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.
1-3
Rybalko, P.D.
6f7077ab-5653-489e-a5ab-f4ef2c0862a4
Khenkin, M.V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Forsh, P.A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Drevinskas, R.
edfc60c3-d75f-4ce5-ad22-9f027b7eeda1
Matsukatova, A.N.
2446c367-83e3-46d1-b610-040eb28692a6
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Kazanskii, A.G.
9db3c8e7-b302-41c6-959b-16a2d6f5e0fc
Rybalko, P.D.
6f7077ab-5653-489e-a5ab-f4ef2c0862a4
Khenkin, M.V.
4f85e0ee-b44b-44a6-b8f8-b05756155bb9
Forsh, P.A.
75b1b269-6a48-4c77-afb6-7ba7fc801734
Drevinskas, R.
edfc60c3-d75f-4ce5-ad22-9f027b7eeda1
Matsukatova, A.N.
2446c367-83e3-46d1-b610-040eb28692a6
Kazansky, P.G.
a5d123ec-8ea8-408c-8963-4a6d921fd76c
Kazanskii, A.G.
9db3c8e7-b302-41c6-959b-16a2d6f5e0fc

Rybalko, P.D., Khenkin, M.V., Forsh, P.A., Drevinskas, R., Matsukatova, A.N., Kazansky, P.G. and Kazanskii, A.G. (2016) Femtosecond laser crystallization of boron-doped amorphous hydrogenated silicon films. Journal of Nano- and Electronic Physics, 8 (3), 1-3. (doi:10.21272/jnep.8(3).03038).

Record type: Article

Abstract

Crystallization of amorphous hydrogenated silicon films with femtosecond laser pulses is one of the promising ways to produce nanocrystalline silicon for photovoltaics. The structure of laser treated films is the most important factor determining materials' electric and photoelectric properties. In this work we investigated the effect of femtosecond laser irradiation of boron doped amorphous hydrogenated silicon films with different fluences on crystalline volume fraction and electrical properties of this material. A sharp increase of conductivity and essential decrease of activation energy of conductivity temperature dependences accompany the crystallization process. The results obtained are explained by increase of boron doping efficiency in crystalline phase of modified silicon film.

Full text not available from this repository.

More information

e-pub ahead of print date: 3 October 2016
Published date: 2016

Identifiers

Local EPrints ID: 441681
URI: http://eprints.soton.ac.uk/id/eprint/441681
PURE UUID: e45855ff-858f-4945-be2d-f55646edca2b

Catalogue record

Date deposited: 24 Jun 2020 16:30
Last modified: 28 Jul 2020 16:43

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×