Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices
Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices
Here the controlled growth of SnSe nanowires by a liquid injection
chemical vapor deposition (CVD) method employing a distorted octahedral
[SnCl4{n BuSe(CH2)3Sen Bu}]
single‐source diselenoether precursor is reported. CVD with this
single‐source precursor allows morphological and compositional control
of the SnSex nanostructures formed, including the transformation of SnSe2
nanoflakes into SnSe nanowires and again to SnSe nanoflakes with
increasing growth temperature. Significantly, highly crystalline SnSe
nanowires with an orthorhombic Pnma 62 crystal structure can be
controllably synthesized in two growth directions, either <011> or
<100>. The ability to tune the growth direction of SnSe will have
important implications for devices constructed using these
nanocrystals. The SnSe nanowires with a <011> growth direction
display a reversible polarity‐dependent memory switching ability, not
previously reported for nanoscale SnSe. A resistive switching on/off
ratio of 103 without the use of a current compliance limit is
seen, illustrating the potential use of SnSe nanowires for low‐power
nonvolatile memory applications.
SnSe, chemical vapor deposition (CVD), layered materials, nanowires, resistive random-access memory (RRAM)
Davitt, Fionán
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Manning, Hugh G.
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Robinson, Fred
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Hawken, Samantha Louise
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Biswas, Subhajit
843e3bab-57ca-4141-b30c-6d5a37f66bf5
Petkov, Nikolay
4243e25a-7819-4fa7-afb4-30a86d8b96be
van Druenen, Maart
6a8687f0-77a6-4985-adeb-f2cfd5905855
Boland, John J.
62a14bf3-acd3-4da3-8569-1b8829dc77dc
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Holmes, Justin D.
ecb7b5b3-fe4b-45e2-b85b-0dd7a3967a4c
1 August 2020
Davitt, Fionán
5c1eb290-47d9-46c6-bcd1-8050b55bea55
Manning, Hugh G.
062f71e3-81f9-4652-bacb-d12d61c9eae6
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Hawken, Samantha Louise
1f5bc11f-bcef-436b-b4bf-065b41a9a09f
Biswas, Subhajit
843e3bab-57ca-4141-b30c-6d5a37f66bf5
Petkov, Nikolay
4243e25a-7819-4fa7-afb4-30a86d8b96be
van Druenen, Maart
6a8687f0-77a6-4985-adeb-f2cfd5905855
Boland, John J.
62a14bf3-acd3-4da3-8569-1b8829dc77dc
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Holmes, Justin D.
ecb7b5b3-fe4b-45e2-b85b-0dd7a3967a4c
Davitt, Fionán, Manning, Hugh G., Robinson, Fred, Hawken, Samantha Louise, Biswas, Subhajit, Petkov, Nikolay, van Druenen, Maart, Boland, John J., Reid, Gillian and Holmes, Justin D.
(2020)
Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices.
Advanced Materials Interfaces, 7 (16), [2000474].
(doi:10.1002/admi.202000474).
Abstract
Here the controlled growth of SnSe nanowires by a liquid injection
chemical vapor deposition (CVD) method employing a distorted octahedral
[SnCl4{n BuSe(CH2)3Sen Bu}]
single‐source diselenoether precursor is reported. CVD with this
single‐source precursor allows morphological and compositional control
of the SnSex nanostructures formed, including the transformation of SnSe2
nanoflakes into SnSe nanowires and again to SnSe nanoflakes with
increasing growth temperature. Significantly, highly crystalline SnSe
nanowires with an orthorhombic Pnma 62 crystal structure can be
controllably synthesized in two growth directions, either <011> or
<100>. The ability to tune the growth direction of SnSe will have
important implications for devices constructed using these
nanocrystals. The SnSe nanowires with a <011> growth direction
display a reversible polarity‐dependent memory switching ability, not
previously reported for nanoscale SnSe. A resistive switching on/off
ratio of 103 without the use of a current compliance limit is
seen, illustrating the potential use of SnSe nanowires for low‐power
nonvolatile memory applications.
Text
Davitt et. al_AMI_Manuscript_(admi.202000474)
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Accepted/In Press date: 8 May 2020
e-pub ahead of print date: 9 June 2020
Published date: 1 August 2020
Additional Information:
Funding Information:
This research was funded by Science Foundation Ireland (Grants: 18/IF/6324, 12/RC/2278, 14/IA/2513 and 16/IA/4462), the Engineering and Physical Sciences Research Council (Grants: EP/M50662X/1 and EP/N509747/1) and the European Research Council (Advanced Grant 321160). The facilities and staff at the Advanced Microscopy Laboratory at Trinity College Dublin are acknowledged for their support.
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords:
SnSe, chemical vapor deposition (CVD), layered materials, nanowires, resistive random-access memory (RRAM)
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Local EPrints ID: 441703
URI: http://eprints.soton.ac.uk/id/eprint/441703
PURE UUID: 9a65f461-aa10-4b4a-9fff-d7369c200a63
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Date deposited: 24 Jun 2020 16:30
Last modified: 17 Mar 2024 05:40
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Contributors
Author:
Fionán Davitt
Author:
Hugh G. Manning
Author:
Fred Robinson
Author:
Samantha Louise Hawken
Author:
Subhajit Biswas
Author:
Nikolay Petkov
Author:
Maart van Druenen
Author:
John J. Boland
Author:
Justin D. Holmes
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