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Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices

Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices
Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices
Here the controlled growth of SnSe nanowires by a liquid injection chemical vapor deposition (CVD) method employing a distorted octahedral [SnCl4{n BuSe(CH2)3Sen Bu}] single‐source diselenoether precursor is reported. CVD with this single‐source precursor allows morphological and compositional control of the SnSex nanostructures formed, including the transformation of SnSe2 nanoflakes into SnSe nanowires and again to SnSe nanoflakes with increasing growth temperature. Significantly, highly crystalline SnSe nanowires with an orthorhombic Pnma 62 crystal structure can be controllably synthesized in two growth directions, either <011> or <100>. The ability to tune the growth direction of SnSe will have important implications for devices constructed using these nanocrystals. The SnSe nanowires with a <011> growth direction display a reversible polarity‐dependent memory switching ability, not previously reported for nanoscale SnSe. A resistive switching on/off ratio of 103 without the use of a current compliance limit is seen, illustrating the potential use of SnSe nanowires for low‐power nonvolatile memory applications.
RRAM, SnSe, chemical vapor deposition, layered materials, nanowires
Davitt, Fionán
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Manning, Hugh G.
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Robinson, Fred
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Hawken, Samantha Louise
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Biswas, Subhajit
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Petkov, Nikolay
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van Druenen, Maart
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Boland, John J.
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Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Holmes, Justin D.
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Davitt, Fionán
5c1eb290-47d9-46c6-bcd1-8050b55bea55
Manning, Hugh G.
062f71e3-81f9-4652-bacb-d12d61c9eae6
Robinson, Fred
8fc7b408-097f-4550-b189-5b6e3a49bf93
Hawken, Samantha Louise
1f5bc11f-bcef-436b-b4bf-065b41a9a09f
Biswas, Subhajit
843e3bab-57ca-4141-b30c-6d5a37f66bf5
Petkov, Nikolay
4243e25a-7819-4fa7-afb4-30a86d8b96be
van Druenen, Maart
6a8687f0-77a6-4985-adeb-f2cfd5905855
Boland, John J.
62a14bf3-acd3-4da3-8569-1b8829dc77dc
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Holmes, Justin D.
ecb7b5b3-fe4b-45e2-b85b-0dd7a3967a4c

Davitt, Fionán, Manning, Hugh G., Robinson, Fred, Hawken, Samantha Louise, Biswas, Subhajit, Petkov, Nikolay, van Druenen, Maart, Boland, John J., Reid, Gillian and Holmes, Justin D. (2020) Crystallographically controlled synthesis of SnSe nanowires: potential in resistive memory devices. Advanced Materials Interfaces, 7 (16), [2000474]. (doi:10.1002/admi.202000474).

Record type: Article

Abstract

Here the controlled growth of SnSe nanowires by a liquid injection chemical vapor deposition (CVD) method employing a distorted octahedral [SnCl4{n BuSe(CH2)3Sen Bu}] single‐source diselenoether precursor is reported. CVD with this single‐source precursor allows morphological and compositional control of the SnSex nanostructures formed, including the transformation of SnSe2 nanoflakes into SnSe nanowires and again to SnSe nanoflakes with increasing growth temperature. Significantly, highly crystalline SnSe nanowires with an orthorhombic Pnma 62 crystal structure can be controllably synthesized in two growth directions, either <011> or <100>. The ability to tune the growth direction of SnSe will have important implications for devices constructed using these nanocrystals. The SnSe nanowires with a <011> growth direction display a reversible polarity‐dependent memory switching ability, not previously reported for nanoscale SnSe. A resistive switching on/off ratio of 103 without the use of a current compliance limit is seen, illustrating the potential use of SnSe nanowires for low‐power nonvolatile memory applications.

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Accepted/In Press date: 8 May 2020
e-pub ahead of print date: 9 June 2020
Keywords: RRAM, SnSe, chemical vapor deposition, layered materials, nanowires

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Local EPrints ID: 441703
URI: http://eprints.soton.ac.uk/id/eprint/441703
PURE UUID: 9a65f461-aa10-4b4a-9fff-d7369c200a63
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468

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Date deposited: 24 Jun 2020 16:30
Last modified: 08 Jun 2021 04:01

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Contributors

Author: Fionán Davitt
Author: Hugh G. Manning
Author: Fred Robinson
Author: Samantha Louise Hawken
Author: Subhajit Biswas
Author: Nikolay Petkov
Author: Maart van Druenen
Author: John J. Boland
Author: Gillian Reid ORCID iD
Author: Justin D. Holmes

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