Electrical annealing for Ge ion-implanted directional couplers
Electrical annealing for Ge ion-implanted directional couplers
Electrical annealing of erasable directional couplers (DCs) was realized. Titanium nitride (TiN) micro-heaters were used to electrically heat up and anneal the Ge-ion implanted regions in silicon, which are used as the coupling waveguides in the erasable DCs. The refractive index of implanted silicon was reduced rapidly by electrical annealing, so that the DCs were effectively erased. The whole annealing process can be accomplished in about 2 seconds. Based on the simulation results, the implanted region can be heated up to about 700 °C.
Electrical annealing, Erasable directional couplers, Ge-ion implantation, Titanium nitride micro-heaters
Yu, X.
7fb4e039-1fb0-4c2e-8567-43e97e77c997
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Milošević, M.M.
b28da945-84a5-4317-8896-6d9ea6a69589
Yan, X.
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
2020
Yu, X.
7fb4e039-1fb0-4c2e-8567-43e97e77c997
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Milošević, M.M.
b28da945-84a5-4317-8896-6d9ea6a69589
Yan, X.
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Yu, X., Chen, Xia, Milošević, M.M., Yan, X., Saito, S. and Reed, G.T.
(2020)
Electrical annealing for Ge ion-implanted directional couplers.
Reed, Graham T. and Knights, Andrew P.
(eds.)
In Silicon Photonics XV.
vol. 11285,
SPIE..
(doi:10.1117/12.2543355).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Electrical annealing of erasable directional couplers (DCs) was realized. Titanium nitride (TiN) micro-heaters were used to electrically heat up and anneal the Ge-ion implanted regions in silicon, which are used as the coupling waveguides in the erasable DCs. The refractive index of implanted silicon was reduced rapidly by electrical annealing, so that the DCs were effectively erased. The whole annealing process can be accomplished in about 2 seconds. Based on the simulation results, the implanted region can be heated up to about 700 °C.
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Published date: 2020
Additional Information:
Publisher Copyright:
© 2020 SPIE.
Venue - Dates:
SPIE Photonics West 2020: SPIE Lase, The Moscone Centre, San Francisco, United States, 2020-02-01 - 2020-02-06
Keywords:
Electrical annealing, Erasable directional couplers, Ge-ion implantation, Titanium nitride micro-heaters
Identifiers
Local EPrints ID: 441974
URI: http://eprints.soton.ac.uk/id/eprint/441974
PURE UUID: 3c4882f7-ff83-4de2-8307-0b7f241d2192
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Date deposited: 03 Jul 2020 16:30
Last modified: 17 Mar 2024 03:29
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Contributors
Author:
X. Yu
Author:
Xia Chen
Author:
M.M. Milošević
Author:
S. Saito
Editor:
Graham T. Reed
Editor:
Andrew P. Knights
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