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Electrical annealing for Ge ion-implanted directional couplers

Electrical annealing for Ge ion-implanted directional couplers
Electrical annealing for Ge ion-implanted directional couplers
Electrical annealing of erasable directional couplers (DCs) was realized. Titanium nitride (TiN) micro-heaters were used to electrically heat up and anneal the Ge-ion implanted regions in silicon, which are used as the coupling waveguides in the erasable DCs. The refractive index of implanted silicon was reduced rapidly by electrical annealing, so that the DCs were effectively erased. The whole annealing process can be accomplished in about 2 seconds. Based on the simulation results, the implanted region can be heated up to about 700 °C.
Electrical annealing, Erasable directional couplers, Ge-ion implantation, Titanium nitride micro-heaters
SPIE
Yu, X.
7fb4e039-1fb0-4c2e-8567-43e97e77c997
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Milošević, M.M.
b28da945-84a5-4317-8896-6d9ea6a69589
Yan, X.
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Reed, Graham T.
Knights, Andrew P.
Yu, X.
7fb4e039-1fb0-4c2e-8567-43e97e77c997
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Milošević, M.M.
b28da945-84a5-4317-8896-6d9ea6a69589
Yan, X.
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Saito, S.
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Reed, Graham T.
Knights, Andrew P.

Yu, X., Chen, Xia, Milošević, M.M., Yan, X., Saito, S. and Reed, G.T. (2020) Electrical annealing for Ge ion-implanted directional couplers. Reed, Graham T. and Knights, Andrew P. (eds.) In Silicon Photonics XV. vol. 11285, SPIE.. (doi:10.1117/12.2543355).

Record type: Conference or Workshop Item (Paper)

Abstract

Electrical annealing of erasable directional couplers (DCs) was realized. Titanium nitride (TiN) micro-heaters were used to electrically heat up and anneal the Ge-ion implanted regions in silicon, which are used as the coupling waveguides in the erasable DCs. The refractive index of implanted silicon was reduced rapidly by electrical annealing, so that the DCs were effectively erased. The whole annealing process can be accomplished in about 2 seconds. Based on the simulation results, the implanted region can be heated up to about 700 °C.

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More information

Published date: 2020
Venue - Dates: SPIE Photonics West 2020: SPIE Lase, The Moscone Centre, San Francisco, United States, 2020-02-01 - 2020-02-06
Keywords: Electrical annealing, Erasable directional couplers, Ge-ion implantation, Titanium nitride micro-heaters

Identifiers

Local EPrints ID: 441974
URI: http://eprints.soton.ac.uk/id/eprint/441974
PURE UUID: 3c4882f7-ff83-4de2-8307-0b7f241d2192
ORCID for Xia Chen: ORCID iD orcid.org/0000-0002-0994-5401
ORCID for S. Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 03 Jul 2020 16:30
Last modified: 08 Oct 2020 16:31

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