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Single photon emission from top-down etched III-nitride quantum dots

Single photon emission from top-down etched III-nitride quantum dots
Single photon emission from top-down etched III-nitride quantum dots
We report the single photon emission properties of III-nitride quantum dots (QDs) fabricated by electrochemical etching method from an epitaxial wafer. Through such top-down fabrication, QDs with diameters of sub-10 nm are obtained, embedded in GaN nanoneedles. Owing to the size induced quantum confinement effect, the photoluminescence of the QDs exhibits a 3.35 nm blueshift compared with that of the epitaxial wafer. At low temperature, a second order correlation value down to 0.123 is observed, indicating a high-purity single photon emission. Our QDs manifest single photon emission at a temperature up to 130 K with a high degree of polarization of 0.69, comparable to those QDs synthesized by epitaxial growth. Our work demonstrates single photon emission are viable in top-down QDs by electrochemical etching III-nitride wafers.
Electrochemical etching, III-nitrides, Quantum dot, Single photon emission
0957-4484
Hou, Yaonan
21cd6d93-63f2-4c1d-8297-6cce6bc7a772
Wang, Yong
a7913cc9-1250-4f71-ab1f-93480043bb6a
Ai, Qingkang
a54ce419-d95b-4b8b-a17a-e0dfea5e16e3
Hou, Yaonan
21cd6d93-63f2-4c1d-8297-6cce6bc7a772
Wang, Yong
a7913cc9-1250-4f71-ab1f-93480043bb6a
Ai, Qingkang
a54ce419-d95b-4b8b-a17a-e0dfea5e16e3

Hou, Yaonan, Wang, Yong and Ai, Qingkang (2020) Single photon emission from top-down etched III-nitride quantum dots. Nanotechnology, 31 (13), [13LT01]. (doi:10.1088/1361-6528/ab6477).

Record type: Article

Abstract

We report the single photon emission properties of III-nitride quantum dots (QDs) fabricated by electrochemical etching method from an epitaxial wafer. Through such top-down fabrication, QDs with diameters of sub-10 nm are obtained, embedded in GaN nanoneedles. Owing to the size induced quantum confinement effect, the photoluminescence of the QDs exhibits a 3.35 nm blueshift compared with that of the epitaxial wafer. At low temperature, a second order correlation value down to 0.123 is observed, indicating a high-purity single photon emission. Our QDs manifest single photon emission at a temperature up to 130 K with a high degree of polarization of 0.69, comparable to those QDs synthesized by epitaxial growth. Our work demonstrates single photon emission are viable in top-down QDs by electrochemical etching III-nitride wafers.

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More information

Accepted/In Press date: 20 December 2019
Published date: 9 January 2020
Keywords: Electrochemical etching, III-nitrides, Quantum dot, Single photon emission

Identifiers

Local EPrints ID: 442050
URI: http://eprints.soton.ac.uk/id/eprint/442050
ISSN: 0957-4484
PURE UUID: eea73d1c-7d3c-4188-8f74-47763cd9468b

Catalogue record

Date deposited: 06 Jul 2020 16:31
Last modified: 05 Jun 2024 18:52

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Contributors

Author: Yaonan Hou
Author: Yong Wang
Author: Qingkang Ai

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