Single photon emission from top-down etched III-nitride quantum dots
Single photon emission from top-down etched III-nitride quantum dots
We report the single photon emission properties of III-nitride quantum dots (QDs) fabricated by electrochemical etching method from an epitaxial wafer. Through such top-down fabrication, QDs with diameters of sub-10 nm are obtained, embedded in GaN nanoneedles. Owing to the size induced quantum confinement effect, the photoluminescence of the QDs exhibits a 3.35 nm blueshift compared with that of the epitaxial wafer. At low temperature, a second order correlation value down to 0.123 is observed, indicating a high-purity single photon emission. Our QDs manifest single photon emission at a temperature up to 130 K with a high degree of polarization of 0.69, comparable to those QDs synthesized by epitaxial growth. Our work demonstrates single photon emission are viable in top-down QDs by electrochemical etching III-nitride wafers.
Electrochemical etching, III-nitrides, Quantum dot, Single photon emission
Hou, Yaonan
21cd6d93-63f2-4c1d-8297-6cce6bc7a772
Wang, Yong
a7913cc9-1250-4f71-ab1f-93480043bb6a
Ai, Qingkang
a54ce419-d95b-4b8b-a17a-e0dfea5e16e3
9 January 2020
Hou, Yaonan
21cd6d93-63f2-4c1d-8297-6cce6bc7a772
Wang, Yong
a7913cc9-1250-4f71-ab1f-93480043bb6a
Ai, Qingkang
a54ce419-d95b-4b8b-a17a-e0dfea5e16e3
Hou, Yaonan, Wang, Yong and Ai, Qingkang
(2020)
Single photon emission from top-down etched III-nitride quantum dots.
Nanotechnology, 31 (13), [13LT01].
(doi:10.1088/1361-6528/ab6477).
Abstract
We report the single photon emission properties of III-nitride quantum dots (QDs) fabricated by electrochemical etching method from an epitaxial wafer. Through such top-down fabrication, QDs with diameters of sub-10 nm are obtained, embedded in GaN nanoneedles. Owing to the size induced quantum confinement effect, the photoluminescence of the QDs exhibits a 3.35 nm blueshift compared with that of the epitaxial wafer. At low temperature, a second order correlation value down to 0.123 is observed, indicating a high-purity single photon emission. Our QDs manifest single photon emission at a temperature up to 130 K with a high degree of polarization of 0.69, comparable to those QDs synthesized by epitaxial growth. Our work demonstrates single photon emission are viable in top-down QDs by electrochemical etching III-nitride wafers.
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Accepted/In Press date: 20 December 2019
Published date: 9 January 2020
Keywords:
Electrochemical etching, III-nitrides, Quantum dot, Single photon emission
Identifiers
Local EPrints ID: 442050
URI: http://eprints.soton.ac.uk/id/eprint/442050
ISSN: 0957-4484
PURE UUID: eea73d1c-7d3c-4188-8f74-47763cd9468b
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Date deposited: 06 Jul 2020 16:31
Last modified: 16 Mar 2024 08:22
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Contributors
Author:
Yaonan Hou
Author:
Yong Wang
Author:
Qingkang Ai
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