Silicon nitride waveguiding for prospective technologies at the 2 μm waveband

Sia, J.X.B., Wang, W., Qiao, Z., Li, X., Guo, X., Zhou, J., Littlejohns, C.G., Zhang, Z., Liu, C., Reed, G.T. and Wang, H. (2019) Silicon nitride waveguiding for prospective technologies at the 2 μm waveband. In 2019 IEEE 16th International Conference on Group IV Photonics (GFP). IEEE.. (doi:10.1109/GROUP4.2019.8925811).

Abstract

Of late, the 2 µm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si₃N₄-SOI platform at the 2 µm waveband. The insertion loss of the Si-Si₃N₄ adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si₃N₄ waveguide propagation losses as low as 1.59 dB/cm have been achieved.

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