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Silicon nitride waveguiding for prospective technologies at the 2 μm waveband

Silicon nitride waveguiding for prospective technologies at the 2 μm waveband
Silicon nitride waveguiding for prospective technologies at the 2 μm waveband
Of late, the 2 µm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si3N4-SOI platform at the 2 µm waveband. The insertion loss of the Si-Si3N4 adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si3N4 waveguide propagation losses as low as 1.59 dB/cm have been achieved.
IEEE
Sia, J.X.B.
5019aea8-3ca1-431e-8be5-78aaf0f4e915
Wang, W.
3c6d6f3d-9b1e-428b-bff8-c3eb242d9706
Qiao, Z.
b331e792-f9de-4c8c-9f45-26023b736ab6
Li, X.
e04fb2b9-0196-4105-a0a4-b9ec7c85a0b0
Guo, X.
0cc3f1a1-9feb-49f1-a78b-b8b603197843
Zhou, J.
2d98311c-5a3b-4731-a424-9cd1dad08d73
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Zhang, Z.
199c8d40-114a-4047-8d61-cc92e09d922c
Liu, C.
3671b6bb-6eea-4366-bd80-b4a7b459713b
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, H.
49f5ed17-4a82-40f3-a6f2-9a9ea8d85ed5
Sia, J.X.B.
5019aea8-3ca1-431e-8be5-78aaf0f4e915
Wang, W.
3c6d6f3d-9b1e-428b-bff8-c3eb242d9706
Qiao, Z.
b331e792-f9de-4c8c-9f45-26023b736ab6
Li, X.
e04fb2b9-0196-4105-a0a4-b9ec7c85a0b0
Guo, X.
0cc3f1a1-9feb-49f1-a78b-b8b603197843
Zhou, J.
2d98311c-5a3b-4731-a424-9cd1dad08d73
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Zhang, Z.
199c8d40-114a-4047-8d61-cc92e09d922c
Liu, C.
3671b6bb-6eea-4366-bd80-b4a7b459713b
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, H.
49f5ed17-4a82-40f3-a6f2-9a9ea8d85ed5

Sia, J.X.B., Wang, W., Qiao, Z., Li, X., Guo, X., Zhou, J., Littlejohns, C.G., Zhang, Z., Liu, C., Reed, G.T. and Wang, H. (2019) Silicon nitride waveguiding for prospective technologies at the 2 μm waveband. In 2019 IEEE 16th International Conference on Group IV Photonics (GFP). IEEE.. (doi:10.1109/GROUP4.2019.8925811).

Record type: Conference or Workshop Item (Paper)

Abstract

Of late, the 2 µm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si3N4-SOI platform at the 2 µm waveband. The insertion loss of the Si-Si3N4 adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si3N4 waveguide propagation losses as low as 1.59 dB/cm have been achieved.

Full text not available from this repository.

More information

Published date: 2019
Venue - Dates: IEEE 16th International Conference on Group IV Photonics (GFP 2019), Singapore, 2019-08-28 - 2019-08-30

Identifiers

Local EPrints ID: 442143
URI: http://eprints.soton.ac.uk/id/eprint/442143
PURE UUID: 7005afca-723f-4ea2-881e-6da88f895a06

Catalogue record

Date deposited: 07 Jul 2020 16:54
Last modified: 28 May 2021 16:30

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