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Er3+ doped chalcogenide glasses and sputtered thin films: structural and spectroscopic characterization

Er3+ doped chalcogenide glasses and sputtered thin films: structural and spectroscopic characterization
Er3+ doped chalcogenide glasses and sputtered thin films: structural and spectroscopic characterization
In this research, we report Er3+ doped chalcogenide based glasses, well known for infrared transparency with various applications in the photonics and optoelectronics. Er3+ doped chalcogenide glasses were prepared by using vertical furnace with an argon gas atmosphere. For the structural and spectroscopic measurements, thin films at about 460nm thicknesses were deposited by using radio-frequency (RF) magnetron sputtering technique. Er3+ deposited thin films were annealed at different temperature as 450, 500, 550, and 600°C in the tube furnace and rapid thermal annealer (RTA) at 2°C/min, and 10°C/min heating rate, respectively. As a result, absorptions, luminescence, and structural properties of the Er3+ ion doped GLS thin films were affected from different annealing process.
Kabalci, I.
eecfc33a-477e-4d63-8144-bdee3817b18d
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0
Kabalci, I.
eecfc33a-477e-4d63-8144-bdee3817b18d
Hewak, D.W.
87c80070-c101-4f7a-914f-4cc3131e3db0

Kabalci, I. and Hewak, D.W. (2016) Er3+ doped chalcogenide glasses and sputtered thin films: structural and spectroscopic characterization. 5th International Symposium on Next-Generation Electronics (ISNE). 04 - 06 May 2016. (doi:10.1109/ISNE.2016.7543396).

Record type: Conference or Workshop Item (Paper)

Abstract

In this research, we report Er3+ doped chalcogenide based glasses, well known for infrared transparency with various applications in the photonics and optoelectronics. Er3+ doped chalcogenide glasses were prepared by using vertical furnace with an argon gas atmosphere. For the structural and spectroscopic measurements, thin films at about 460nm thicknesses were deposited by using radio-frequency (RF) magnetron sputtering technique. Er3+ deposited thin films were annealed at different temperature as 450, 500, 550, and 600°C in the tube furnace and rapid thermal annealer (RTA) at 2°C/min, and 10°C/min heating rate, respectively. As a result, absorptions, luminescence, and structural properties of the Er3+ ion doped GLS thin films were affected from different annealing process.

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More information

Published date: 2016
Venue - Dates: 5th International Symposium on Next-Generation Electronics (ISNE), 2016-05-04 - 2016-05-06

Identifiers

Local EPrints ID: 442371
URI: http://eprints.soton.ac.uk/id/eprint/442371
PURE UUID: 66e4b049-57d7-4c93-a6e2-1878b6f8e4a8
ORCID for D.W. Hewak: ORCID iD orcid.org/0000-0002-2093-5773

Catalogue record

Date deposited: 14 Jul 2020 16:31
Last modified: 31 Jul 2020 01:31

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