The University of Southampton
University of Southampton Institutional Repository

Single crystal silicon-germanium-on-insulator for high density optical interconnects

Single crystal silicon-germanium-on-insulator for high density optical interconnects
Single crystal silicon-germanium-on-insulator for high density optical interconnects
The field of silicon photonics has seen a period of rapid technological advancement over the past decade, with significant interest and investment from both academia and industry. Progress is expected to continue, with global sales of silicon photonics products predicted to reach US 1 billion by 2020. A key motivation for silicon photonics is integration; achieved by using the CMOS compatible materials silicon and germanium. Here, we establish a silicon-germanium-on-insulator material platform using a rapid melt growth technique. We present a novel method for the fabrication of multiple, uniform composition localised silicon-germanium-on-insulator layers, demonstrating the ability to tune the composition of each layer by modifying the structural parameters of the layers, as shown in Fig. 1. This is achieved using only a single Ge growth step and a single anneal step, therefore dramatically reducing fabrication cost and complexity when compared with traditional epitaxy techniques.We investigate the regrowth mechanism exhibited by this rapid melt growth technique, and study the effects of the structural parameters of the tailored structures on the SiGe composition profiles. Using this material platform we can potentially exploit the tunable bandgap of the SiGe alloy for wavelength division multiplexing applications, with the potential to form low power electro-absorption modulators with an extremely high bandwidth density when compared to other modulator device designs. In addition, we discuss extending silicon photonic circuits into mid-infrared wavelengths, and identify the potential applications of such systems.We present some early results from passive mid-infrared photonic devices on a silicon-on-insulator platform.
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Rouifed, M.S.
c498264d-50f4-4003-9d18-b40f318160e2
Qiu, H.
1061098e-e16e-49ad-8068-26f68872db23
Xin, Tina Guo
653c8d6c-567e-453b-8cd7-cf294c901d84
Hu, Ting
4dce8d60-2550-42b0-9535-1e49e504ffab
Domínguez Bucio, T.
b8b4e121-f09f-4ae0-8550-47bf2fd49da1
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Rouifed, M.S.
c498264d-50f4-4003-9d18-b40f318160e2
Qiu, H.
1061098e-e16e-49ad-8068-26f68872db23
Xin, Tina Guo
653c8d6c-567e-453b-8cd7-cf294c901d84
Hu, Ting
4dce8d60-2550-42b0-9535-1e49e504ffab
Domínguez Bucio, T.
b8b4e121-f09f-4ae0-8550-47bf2fd49da1
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2

Littlejohns, C.G., Rouifed, M.S., Qiu, H., Xin, Tina Guo, Hu, Ting, Domínguez Bucio, T., Nedeljković, M., Thomson, D.J., Khokhar, A.Z., Mashanovich, G.Z., Reed, G.T., Wang, Hong and Gardes, F.Y. (2016) Single crystal silicon-germanium-on-insulator for high density optical interconnects. Progress in Electromagnetic Research Symposium, China. 07 - 10 Aug 2016. (doi:10.1109/PIERS.2016.7735229).

Record type: Conference or Workshop Item (Paper)

Abstract

The field of silicon photonics has seen a period of rapid technological advancement over the past decade, with significant interest and investment from both academia and industry. Progress is expected to continue, with global sales of silicon photonics products predicted to reach US 1 billion by 2020. A key motivation for silicon photonics is integration; achieved by using the CMOS compatible materials silicon and germanium. Here, we establish a silicon-germanium-on-insulator material platform using a rapid melt growth technique. We present a novel method for the fabrication of multiple, uniform composition localised silicon-germanium-on-insulator layers, demonstrating the ability to tune the composition of each layer by modifying the structural parameters of the layers, as shown in Fig. 1. This is achieved using only a single Ge growth step and a single anneal step, therefore dramatically reducing fabrication cost and complexity when compared with traditional epitaxy techniques.We investigate the regrowth mechanism exhibited by this rapid melt growth technique, and study the effects of the structural parameters of the tailored structures on the SiGe composition profiles. Using this material platform we can potentially exploit the tunable bandgap of the SiGe alloy for wavelength division multiplexing applications, with the potential to form low power electro-absorption modulators with an extremely high bandwidth density when compared to other modulator device designs. In addition, we discuss extending silicon photonic circuits into mid-infrared wavelengths, and identify the potential applications of such systems.We present some early results from passive mid-infrared photonic devices on a silicon-on-insulator platform.

Full text not available from this repository.

More information

Published date: 2016
Venue - Dates: Progress in Electromagnetic Research Symposium, China, 2016-08-07 - 2016-08-10

Identifiers

Local EPrints ID: 442374
URI: http://eprints.soton.ac.uk/id/eprint/442374
PURE UUID: 97c5d79b-33e5-46ae-9da8-813e48ce5797
ORCID for M. Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

Catalogue record

Date deposited: 14 Jul 2020 16:31
Last modified: 31 Jul 2020 01:40

Export record

Altmetrics

Contributors

Author: M.S. Rouifed
Author: H. Qiu
Author: Tina Guo Xin
Author: Ting Hu
Author: T. Domínguez Bucio
Author: M. Nedeljković ORCID iD
Author: D.J. Thomson
Author: A.Z. Khokhar
Author: G.T. Reed
Author: Hong Wang
Author: F.Y. Gardes

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×