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Mid-IR silicon photonics

Mid-IR silicon photonics
Mid-IR silicon photonics
Mid-IR silicon photonics is attracting interest due to a host of potential applications. As the mid-IR covers a wide range of wavelengths, there are several material platforms that are being investigated. Three of them will be presented in more details: silicon-on-insulator (SOI), suspended Si and Ge on Si. A number of passive and active devices have been demonstrated up to a wavelength of 4 µm, such as low loss SOI waveguides (rib, strip, slot), efficient couplers, filters, multiplexers and spectrometers, as well as modulators and detectors. To extend transparency of SOI waveguides, bottom oxide cladding can be removed. A new technique based on subwavelength gratings has been developed and a library of passive devices have been designed and fabricated. This approach involves only one dry etch step and offers more mechanically robust structures. Successful realisation of sub dB/cm waveguides and low loss bends, MMIs, MZIs, directional and grating couplers in the mid-IR will be presented. Ge on Si material can have larger transparency range than suspended Si . Sub dB/cm waveguides and low loss passive devices in this platform have been demonstrated, as well as all optical modulation and two photon absorption measurements. Finally a theoretical investigation free carrier optical modulation in Ge has been carried out.
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051

Mashanovich, G.Z. (2016) Mid-IR silicon photonics. Progress in Electromagnetic Research Symposium, , Shanghai, China. 07 - 10 Aug 2016. (doi:10.1109/PIERS.2016.7734471).

Record type: Conference or Workshop Item (Paper)

Abstract

Mid-IR silicon photonics is attracting interest due to a host of potential applications. As the mid-IR covers a wide range of wavelengths, there are several material platforms that are being investigated. Three of them will be presented in more details: silicon-on-insulator (SOI), suspended Si and Ge on Si. A number of passive and active devices have been demonstrated up to a wavelength of 4 µm, such as low loss SOI waveguides (rib, strip, slot), efficient couplers, filters, multiplexers and spectrometers, as well as modulators and detectors. To extend transparency of SOI waveguides, bottom oxide cladding can be removed. A new technique based on subwavelength gratings has been developed and a library of passive devices have been designed and fabricated. This approach involves only one dry etch step and offers more mechanically robust structures. Successful realisation of sub dB/cm waveguides and low loss bends, MMIs, MZIs, directional and grating couplers in the mid-IR will be presented. Ge on Si material can have larger transparency range than suspended Si . Sub dB/cm waveguides and low loss passive devices in this platform have been demonstrated, as well as all optical modulation and two photon absorption measurements. Finally a theoretical investigation free carrier optical modulation in Ge has been carried out.

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More information

Published date: 2016
Venue - Dates: Progress in Electromagnetic Research Symposium, , Shanghai, China, 2016-08-07 - 2016-08-10

Identifiers

Local EPrints ID: 442429
URI: http://eprints.soton.ac.uk/id/eprint/442429
PURE UUID: 6d16923b-375c-457f-9ca3-cb57c2a6fcc6

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Date deposited: 15 Jul 2020 16:31
Last modified: 12 Dec 2021 10:16

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