CMOS-compatible deposition of tunable crystalline SiGe composition on insulator
CMOS-compatible deposition of tunable crystalline SiGe composition on insulator
We report a new method of deposition for crystalline SiGe and Ge on insulator. The method enable to deposit multiple concentration of SiGe or pure Ge on insulator using one deposition process.
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, G.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
5 June 2016
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, G.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, F.Y., Littlejohns, C.G., Domínguez Bucio, Thalia, Nedeljković, M., Mashanovich, G. and Reed, G.T.
(2016)
CMOS-compatible deposition of tunable crystalline SiGe composition on insulator.
Conference on Lasers and Electro-Optics 2016, , San Jose, United States.
05 - 10 Jun 2016.
(doi:10.1364/CLEO_SI.2016.SF1P.3).
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Conference or Workshop Item
(Paper)
Abstract
We report a new method of deposition for crystalline SiGe and Ge on insulator. The method enable to deposit multiple concentration of SiGe or pure Ge on insulator using one deposition process.
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Published date: 5 June 2016
Venue - Dates:
Conference on Lasers and Electro-Optics 2016, , San Jose, United States, 2016-06-05 - 2016-06-10
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Local EPrints ID: 442477
URI: http://eprints.soton.ac.uk/id/eprint/442477
PURE UUID: e74b101a-c155-4b26-a443-b615dbabf7fe
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Date deposited: 16 Jul 2020 16:30
Last modified: 29 Oct 2024 02:45
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