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CMOS-compatible deposition of tunable crystalline SiGe composition on insulator

CMOS-compatible deposition of tunable crystalline SiGe composition on insulator
CMOS-compatible deposition of tunable crystalline SiGe composition on insulator
We report a new method of deposition for crystalline SiGe and Ge on insulator. The method enable to deposit multiple concentration of SiGe or pure Ge on insulator using one deposition process.
Gardes, F.Y.
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Littlejohns, C.
0fd6585d-030d-4d8f-a411-6fc03e083efa
Domínguez Bucio, T.B.
b8b4e121-f09f-4ae0-8550-47bf2fd49da1
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, G.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.
0fd6585d-030d-4d8f-a411-6fc03e083efa
Domínguez Bucio, T.B.
b8b4e121-f09f-4ae0-8550-47bf2fd49da1
Nedeljković, M.
b64e21c2-1b95-479d-a35c-3456dff8c796
Mashanovich, G.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139

Gardes, F.Y., Littlejohns, C., Domínguez Bucio, T.B., Nedeljković, M., Mashanovich, G. and Reed, G.T. (2016) CMOS-compatible deposition of tunable crystalline SiGe composition on insulator. Conference on Lasers and Electro-Optics 2016, , San Jose, United States. 04 - 09 Jun 2016. (doi:10.1364/CLEO_SI.2016.SF1P.3).

Record type: Conference or Workshop Item (Paper)

Abstract

We report a new method of deposition for crystalline SiGe and Ge on insulator. The method enable to deposit multiple concentration of SiGe or pure Ge on insulator using one deposition process.

Full text not available from this repository.

More information

Published date: 5 June 2016
Venue - Dates: Conference on Lasers and Electro-Optics 2016, , San Jose, United States, 2016-06-04 - 2016-06-09

Identifiers

Local EPrints ID: 442477
URI: http://eprints.soton.ac.uk/id/eprint/442477
PURE UUID: e74b101a-c155-4b26-a443-b615dbabf7fe
ORCID for M. Nedeljković: ORCID iD orcid.org/0000-0002-9170-7911

Catalogue record

Date deposited: 16 Jul 2020 16:30
Last modified: 18 Feb 2021 17:23

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