Group IV compounds for integrated photonic applications
Group IV compounds for integrated photonic applications
We report methods of engineering the bandgap of SiGe and Ge compounds for the fabrication of electro absorption modulators and light emitting devices. We demonstrate uniform composition, single crystal, defect free SiGe-on-insulator formation. The composition can be tuned in different positions of the chip by modifying the structural design. We also demonstrate Ge disks with strain values of 1.1 and 0.6%.
174-175
Gardes, F.Y.
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Littlejohns, C.G.
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Tina, G.X.
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H., Qiu
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Hu, T.
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Zhang, Z.
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Liu, C.
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Reed, G.T.
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Wang, H.
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10 November 2016
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Tina, G.X.
4451e1ac-a4af-44b2-9f5c-b80b21bca2c3
H., Qiu
6cd3cf3c-7768-497d-8b3a-431705a6d300
Hu, T.
456b2166-eb51-4683-afa6-0b55aea3e040
Zhang, Z.
fd968521-9e43-4b50-b67e-3b6dfa095d13
Liu, C.
3671b6bb-6eea-4366-bd80-b4a7b459713b
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Wang, H.
48d1968b-5c1e-4780-b51f-af515c06138b
Gardes, F.Y., Littlejohns, C.G., Tina, G.X., H., Qiu, Hu, T., Zhang, Z., Liu, C., Reed, G.T. and Wang, H.
(2016)
Group IV compounds for integrated photonic applications.
IEEE 13th International Conference on Group IV Photonics, Shanghai, China.
24 - 26 Aug 2016.
.
(doi:10.1109/GROUP4.2016.7739129).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report methods of engineering the bandgap of SiGe and Ge compounds for the fabrication of electro absorption modulators and light emitting devices. We demonstrate uniform composition, single crystal, defect free SiGe-on-insulator formation. The composition can be tuned in different positions of the chip by modifying the structural design. We also demonstrate Ge disks with strain values of 1.1 and 0.6%.
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Published date: 10 November 2016
Venue - Dates:
IEEE 13th International Conference on Group IV Photonics, Shanghai, China, 2016-08-24 - 2016-08-26
Identifiers
Local EPrints ID: 442484
URI: http://eprints.soton.ac.uk/id/eprint/442484
PURE UUID: 0dd9dfbd-c77b-43fa-aa94-e88ece36caaa
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Date deposited: 16 Jul 2020 16:30
Last modified: 17 Mar 2024 03:26
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Contributors
Author:
G.X. Tina
Author:
Qiu H.
Author:
T. Hu
Author:
Z. Zhang
Author:
C. Liu
Author:
H. Wang
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