Ion implantation in silicon for photonic device trimming
Ion implantation in silicon for photonic device trimming
We implemented germanium ion implantation based refractive index change in integrated photonics devices for device trimming. Partial annealing of the ion implanted section revealed the possibility to permanently adjust the resonant wavelength peak position to a target wavelength.
Milošević, Milan M.
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Chen, Xia
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Cao, Wei
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Thomson, David J.
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Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Littlejohns, Callum G.
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Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
2017
Milošević, Milan M.
b28da945-84a5-4317-8896-6d9ea6a69589
Chen, Xia
64f6ab92-ca11-4489-8c03-52bc986209ae
Cao, Wei
5202fa2b-a471-45d4-84e9-9104dffdbbfc
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Littlejohns, Callum G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Milošević, Milan M., Chen, Xia, Cao, Wei, Thomson, David J., Reed, Graham T., Littlejohns, Callum G. and Wang, Hong
(2017)
Ion implantation in silicon for photonic device trimming.
In 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR).
IEEE..
(doi:10.1109/CLEOPR.2017.8118916).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We implemented germanium ion implantation based refractive index change in integrated photonics devices for device trimming. Partial annealing of the ion implanted section revealed the possibility to permanently adjust the resonant wavelength peak position to a target wavelength.
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Published date: 2017
Venue - Dates:
2017 Conference on Lasers and Electro-Optics Pacific Rim, , Singapore, Singapore, 2017-07-31 - 2017-08-04
Identifiers
Local EPrints ID: 442519
URI: http://eprints.soton.ac.uk/id/eprint/442519
PURE UUID: 4c0de4b4-1c60-4fe6-aa54-b0829cdb3ccd
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Date deposited: 17 Jul 2020 16:31
Last modified: 16 Jul 2024 17:50
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Contributors
Author:
Milan M. Milošević
Author:
Xia Chen
Author:
Wei Cao
Author:
Hong Wang
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