Low propagation loss Ge-on-Si waveguides and their dependency on processing methods

Anantha, P., Zhang, Lin, Li, Wei, Guo, Xin, Qiu, Haodong, Chong, Gang Yih, Littlejohns, Callum G., Nedeljković, Miloš, Soler Penadés, Jordi, Mashanovich, Goran Z., Wang, Hong and Tan, Chuan Seng (2017) Low propagation loss Ge-on-Si waveguides and their dependency on processing methods. In 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). IEEE.. (doi:10.1109/CLEOPR.2017.8118738).

Abstract

The successful fabrication of MIR Ge-on-Si waveguides written by both the high-resolution electron beam lithography (EBL) approach, as well as the wafer scale, high throughput approach using 365 nm i-line stepper lithography is reported. A low propagation loss of ~2.7 dB/cm at a wavelength of 3.8 µm is shown for Ge-on-Si waveguides patterned using the i-line stepper. The waveguide etching technique, using reactive ion or deep-reactive ion etching, is also analyzed. Furthermore, the propagation loss values for both the lithographic techniques are found to be comparable. Therefore the advantage of using a simpler i-line stepper lithography for high volume fabrication is highlighted.

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Contributors

Author: Miloš Nedeljković

Author: Jordi Soler Penadés

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