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Low propagation loss Ge-on-Si waveguides and their dependency on processing methods

Low propagation loss Ge-on-Si waveguides and their dependency on processing methods
Low propagation loss Ge-on-Si waveguides and their dependency on processing methods
The successful fabrication of MIR Ge-on-Si waveguides written by both the high-resolution electron beam lithography (EBL) approach, as well as the wafer scale, high throughput approach using 365 nm i-line stepper lithography is reported. A low propagation loss of ~2.7 dB/cm at a wavelength of 3.8 µm is shown for Ge-on-Si waveguides patterned using the i-line stepper. The waveguide etching technique, using reactive ion or deep-reactive ion etching, is also analyzed. Furthermore, the propagation loss values for both the lithographic techniques are found to be comparable. Therefore the advantage of using a simpler i-line stepper lithography for high volume fabrication is highlighted.
IEEE
Anantha, P.
b138e6c1-07d5-4ae1-b816-a2e6bdf0319c
Zhang, Lin
64258e36-bad4-440a-b9b5-7075a4082afb
Li, Wei
eb838bb4-2eb6-430d-90ea-b0ef8bf8b1ff
Guo, Xin
c1da16ff-f2d9-4500-92c7-aafb401efab8
Qiu, Haodong
1061098e-e16e-49ad-8068-26f68872db23
Chong, Gang Yih
e40daf76-a636-48d4-98a5-900230aa4b5b
Littlejohns, Callum G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Nedeljković, Milos
9a8b131e-8e02-4c01-b3cd-ad8cbbd498bf
Soler Penadés, Jordi
f18f3619-0d71-4547-95fd-dd38c37b7adb
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Tan, Chuan Seng
82f17ca6-b02e-4e81-b026-ebd23079f432
Anantha, P.
b138e6c1-07d5-4ae1-b816-a2e6bdf0319c
Zhang, Lin
64258e36-bad4-440a-b9b5-7075a4082afb
Li, Wei
eb838bb4-2eb6-430d-90ea-b0ef8bf8b1ff
Guo, Xin
c1da16ff-f2d9-4500-92c7-aafb401efab8
Qiu, Haodong
1061098e-e16e-49ad-8068-26f68872db23
Chong, Gang Yih
e40daf76-a636-48d4-98a5-900230aa4b5b
Littlejohns, Callum G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Nedeljković, Milos
9a8b131e-8e02-4c01-b3cd-ad8cbbd498bf
Soler Penadés, Jordi
f18f3619-0d71-4547-95fd-dd38c37b7adb
Mashanovich, Goran Z.
c806e262-af80-4836-b96f-319425060051
Wang, Hong
dfd0ec4f-682a-4596-a0d1-171313cc5733
Tan, Chuan Seng
82f17ca6-b02e-4e81-b026-ebd23079f432

Anantha, P., Zhang, Lin, Li, Wei, Guo, Xin, Qiu, Haodong, Chong, Gang Yih, Littlejohns, Callum G., Nedeljković, Milos, Soler Penadés, Jordi, Mashanovich, Goran Z., Wang, Hong and Tan, Chuan Seng (2017) Low propagation loss Ge-on-Si waveguides and their dependency on processing methods. In 2017 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR). IEEE.. (doi:10.1109/CLEOPR.2017.8118738).

Record type: Conference or Workshop Item (Paper)

Abstract

The successful fabrication of MIR Ge-on-Si waveguides written by both the high-resolution electron beam lithography (EBL) approach, as well as the wafer scale, high throughput approach using 365 nm i-line stepper lithography is reported. A low propagation loss of ~2.7 dB/cm at a wavelength of 3.8 µm is shown for Ge-on-Si waveguides patterned using the i-line stepper. The waveguide etching technique, using reactive ion or deep-reactive ion etching, is also analyzed. Furthermore, the propagation loss values for both the lithographic techniques are found to be comparable. Therefore the advantage of using a simpler i-line stepper lithography for high volume fabrication is highlighted.

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More information

Published date: 2017
Venue - Dates: CLEO-Pacific Rim 2017, Singapore, 2017-07-31 - 2017-08-04

Identifiers

Local EPrints ID: 442520
URI: http://eprints.soton.ac.uk/id/eprint/442520
PURE UUID: 821abe9e-544a-4939-963c-607529e40d45
ORCID for Jordi Soler Penadés: ORCID iD orcid.org/0000-0002-1706-8533

Catalogue record

Date deposited: 17 Jul 2020 16:31
Last modified: 28 Jul 2020 16:52

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