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Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solution

Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solution
Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solution
We report the thermoelectric properties of Bi2Te3 thin films electrodeposited from the weakly coordinating solvent dichloromethane (CH2Cl2). It was found that the oxidation of porous films is significant, causing the degradation of its thermoelectric properties. We show that the morphology of the film can be improved drastically by applying a short initial nucleation pulse, which generates a large number of nuclei, and then growing the nuclei by pulsed electrodeposition at a much lower overpotential. This significantly reduces the oxidation of the films as smooth films have a smaller surface-to-volume ratio and are less prone to oxidation. X-ray photoelectron spectroscopy (XPS) shows that those films with Te(O) termination show a complete absence of oxygen below the surface layer. A thin film transfer process was developed using polystyrene as a carrier polymer to transfer the films from the conductive TiN to an insulating layer for thermoelectrical characterization. Temperature-dependent Seebeck measurements revealed a room-temperature coefficient of −51.7 μV/K growing to nearly −100 μV/K at 520 °C. The corresponding power factor reaches a value of 88.2 μW/mK2 at that temperature.
2470-1343
14679-14688
Cicvarić, Katarina
ed688ac1-6d46-4481-8825-9e3978dabfd1
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Newbrook, Daniel W.
380b603a-3de2-40d3-b008-2fa079341513
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
De Groot, C.H. Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Cicvarić, Katarina
ed688ac1-6d46-4481-8825-9e3978dabfd1
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Newbrook, Daniel W.
380b603a-3de2-40d3-b008-2fa079341513
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Ye, Sheng
3cdaba62-b2e3-47ec-9aab-a284b382922d
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
De Groot, C.H. Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Cicvarić, Katarina, Meng, Lingcong, Newbrook, Daniel W., Huang, Ruomeng, Ye, Sheng, Zhang, Wenjian, Hector, Andrew L., Reid, Gillian, Bartlett, Philip N. and De Groot, C.H. Kees (2020) Thermoelectric properties of bismuth telluride thin films electrodeposited from a non-aqueous solution. ACS Omega, 5 (24), 14679-14688. (doi:10.1021/acsomega.0c01284).

Record type: Article

Abstract

We report the thermoelectric properties of Bi2Te3 thin films electrodeposited from the weakly coordinating solvent dichloromethane (CH2Cl2). It was found that the oxidation of porous films is significant, causing the degradation of its thermoelectric properties. We show that the morphology of the film can be improved drastically by applying a short initial nucleation pulse, which generates a large number of nuclei, and then growing the nuclei by pulsed electrodeposition at a much lower overpotential. This significantly reduces the oxidation of the films as smooth films have a smaller surface-to-volume ratio and are less prone to oxidation. X-ray photoelectron spectroscopy (XPS) shows that those films with Te(O) termination show a complete absence of oxygen below the surface layer. A thin film transfer process was developed using polystyrene as a carrier polymer to transfer the films from the conductive TiN to an insulating layer for thermoelectrical characterization. Temperature-dependent Seebeck measurements revealed a room-temperature coefficient of −51.7 μV/K growing to nearly −100 μV/K at 520 °C. The corresponding power factor reaches a value of 88.2 μW/mK2 at that temperature.

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Accepted/In Press date: 5 May 2020
e-pub ahead of print date: 11 June 2020
Published date: 23 June 2020
Additional Information: Copyright © 2020 American Chemical Society.

Identifiers

Local EPrints ID: 442631
URI: http://eprints.soton.ac.uk/id/eprint/442631
ISSN: 2470-1343
PURE UUID: 75f26438-e87e-4af6-902d-5d7b084315d6
ORCID for Lingcong Meng: ORCID iD orcid.org/0000-0002-3995-3584
ORCID for Daniel W. Newbrook: ORCID iD orcid.org/0000-0002-5047-6168
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for C.H. Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 21 Jul 2020 16:34
Last modified: 18 Feb 2021 17:33

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Contributors

Author: Katarina Cicvarić
Author: Lingcong Meng ORCID iD
Author: Daniel W. Newbrook ORCID iD
Author: Ruomeng Huang
Author: Sheng Ye
Author: Wenjian Zhang
Author: Gillian Reid ORCID iD

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