Mashanovich, G.Z., Nedeljković, M., Soler Penadés, J., Mitchell, C.J., Khokhar, A.Z., Littlejohns, C.J., Stanković, S., Troia, B., Passaro, V.M.N., Shen, L., Healy, N., Peacock, A.C., Ortega-Moñux, A., Wangüemert-Pérez, G., Halir, R., Molina-Fernández, I., Benediković, D., Murugan, G.S., Wilkinson, J.S., Cheben, P., Villafranca, A., Ackert, J.J., Knights, A.P., Thomson, D.J., Gardes, F.Y. and Reed, G.T. (2015) Group IV photonics for the mid-infrared. In Integrated Photonics Research, Silicon and Nanophotonics 2015. Optical Society of America.. (doi:10.1364/IPRSN.2015.IT3A.2).
Abstract
In this paper we present SOI, suspended Si, and Ge-on-Si photonic platforms and mid-IR passive and active devices based on these platforms. We demonstrate low loss waveguides, splitters, filters, interferometers and spectrometers in different material platforms. Mid-infrared detection using defect engineered silicon waveguides is reported at the wavelength of 2-2.5 µm. All optical modulation in Ge is also analyzed. Finally, theoretical investigation of electroabsorption and electrorefraction in Ge is reported.
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