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A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 µm SiGe:C BiCMOS

A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 µm SiGe:C BiCMOS
A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 µm SiGe:C BiCMOS
This paper presents as a novelty a fully monolithically integrated 10 Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25 µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS transistors) a SiGe BiCMOS process (MOS transistors and fast SiGe bipolar transistors) is implemented. The fastest bipolar transistors in the BiCMOS product line used have a transit frequency of ft ~ 120 GHz and a collector-emitter breakdown voltage of BVCE0 = 2.2 V (IHP SG25H3). The main focus of this paper will be given to the electronic drivers, where two driver variants are implemented in the test chips. Circuit descriptions and simulations, which treat the influences of noise and bond wires, are presented. Measurements at separate test chips for the drivers show that the integrated driver variant one has a low power consumption in the range of 0.66 to 0.68 W but a high gain of S21 = 37 dB. From the large signal point of view this driver delivers an inverted as well as a non-inverted output data signal between 0 and 2.5 V (5 Vpp differential). Driver variant one is supplied with 2.5 V and with 3.5 V. Bit-error-ratio (BER) measurements resulted in a BER better than 10-12 for voltage differences of the input data stream down to 50 mVpp. Driver variant two, which is an adapted version of driver variant one, is supplied with 2.5 and 4.2 V, consumes 0.83 to 0.87 W, delivers a differential data signal with 5.6 Vpp at the output and has a gain of S21 = 40 dB. The chip of the fully integrated modulator occupies an area of 12.3 mm2 due to the photonic components. Measurements with a 240 mVpp electrical input data stream, 1.25 V input common-mode voltage and for an optical input wavelength of 1540 nm resulted in an extinction ratio of 3.3 dB for 1 mm long RF phase shifters in each modulator arm driven by driver variant one and a DC tuning voltage of 1.2 V. The extinction ratio was 8.4 dB at a DC tuning voltage of 7 V for a device with 2 mm long RF phase shifters in each arm and driver variant two.
0429-7725
Goll, Bernard
378a0027-4e52-4be4-9728-1bbbd26d0d3d
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Zimmermann, Lars
2580afa4-04c0-40ad-8707-693673cb9113
Porte, Henri
73512290-e35f-460e-8aa8-e7d54f7f0687
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Youfang
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Knoll, Dieter
b9e37d07-6517-48e3-96d6-51547fbf4db7
Lischke, Stefan
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Tillack, Bernd
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Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Zimmermann, Horst
f94831b8-a04a-4d82-baec-286043e86494
Goll, Bernard
378a0027-4e52-4be4-9728-1bbbd26d0d3d
Thomson, David J.
17c1626c-2422-42c6-98e0-586ae220bcda
Zimmermann, Lars
2580afa4-04c0-40ad-8707-693673cb9113
Porte, Henri
73512290-e35f-460e-8aa8-e7d54f7f0687
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Hu, Youfang
38fe48b3-1609-4834-ad54-dc823e3a98b3
Knoll, Dieter
b9e37d07-6517-48e3-96d6-51547fbf4db7
Lischke, Stefan
d9665132-10c2-410e-befc-27ba8df964ca
Tillack, Bernd
75b39167-c102-4f15-93c8-79540b68c938
Reed, Graham T.
ca08dd60-c072-4d7d-b254-75714d570139
Zimmermann, Horst
f94831b8-a04a-4d82-baec-286043e86494

Goll, Bernard, Thomson, David J., Zimmermann, Lars, Porte, Henri, Gardes, Frederic Y., Hu, Youfang, Knoll, Dieter, Lischke, Stefan, Tillack, Bernd, Reed, Graham T. and Zimmermann, Horst (2014) A monolithically integrated silicon modulator with a 10 Gb/s 5 Vpp or 5.6 Vpp driver in 0.25 µm SiGe:C BiCMOS. Frontiers in Physics, 2. (doi:10.3389/fphy.2014.00062).

Record type: Article

Abstract

This paper presents as a novelty a fully monolithically integrated 10 Gb/s silicon modulator consisting of an electrical driver plus optical phase modulator in 0.25 µm SiGe:C BiCMOS technology on one chip, where instead of a SOI CMOS process (only MOS transistors) a SiGe BiCMOS process (MOS transistors and fast SiGe bipolar transistors) is implemented. The fastest bipolar transistors in the BiCMOS product line used have a transit frequency of ft ~ 120 GHz and a collector-emitter breakdown voltage of BVCE0 = 2.2 V (IHP SG25H3). The main focus of this paper will be given to the electronic drivers, where two driver variants are implemented in the test chips. Circuit descriptions and simulations, which treat the influences of noise and bond wires, are presented. Measurements at separate test chips for the drivers show that the integrated driver variant one has a low power consumption in the range of 0.66 to 0.68 W but a high gain of S21 = 37 dB. From the large signal point of view this driver delivers an inverted as well as a non-inverted output data signal between 0 and 2.5 V (5 Vpp differential). Driver variant one is supplied with 2.5 V and with 3.5 V. Bit-error-ratio (BER) measurements resulted in a BER better than 10-12 for voltage differences of the input data stream down to 50 mVpp. Driver variant two, which is an adapted version of driver variant one, is supplied with 2.5 and 4.2 V, consumes 0.83 to 0.87 W, delivers a differential data signal with 5.6 Vpp at the output and has a gain of S21 = 40 dB. The chip of the fully integrated modulator occupies an area of 12.3 mm2 due to the photonic components. Measurements with a 240 mVpp electrical input data stream, 1.25 V input common-mode voltage and for an optical input wavelength of 1540 nm resulted in an extinction ratio of 3.3 dB for 1 mm long RF phase shifters in each modulator arm driven by driver variant one and a DC tuning voltage of 1.2 V. The extinction ratio was 8.4 dB at a DC tuning voltage of 7 V for a device with 2 mm long RF phase shifters in each arm and driver variant two.

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Published date: 7 November 2014

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Local EPrints ID: 442683
URI: http://eprints.soton.ac.uk/id/eprint/442683
ISSN: 0429-7725
PURE UUID: 613e07d2-c0c1-4e97-8b0f-d506cf9332c2

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Date deposited: 23 Jul 2020 16:30
Last modified: 14 Jan 2021 19:19

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Contributors

Author: Bernard Goll
Author: Lars Zimmermann
Author: Henri Porte
Author: Youfang Hu
Author: Dieter Knoll
Author: Stefan Lischke
Author: Bernd Tillack
Author: Graham T. Reed
Author: Horst Zimmermann

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