Thulium-doped silica fibers with enhanced 3H4 level lifetime: modelling the devices for 800-820 nm band
Thulium-doped silica fibers with enhanced 3H4 level lifetime: modelling the devices for 800-820 nm band
Silica-based thulium-doped fiber devices operating around 810 nm would extend the spectral range covered by highpower fiber devices. Using a comprehensive numerical model of the fiber we have shown that efficient lasing at 810 nm can be achieved for specific ranges of the laser cavity parameters in silica-based thulium-doped fibers with enhanced 3H4 lifetime up to 58 µs as measured in our highly alumina-codoped fibers. We present optimization of the thulium-doped fiber and laser cavity parameters and also potential applications of the developed host material in amplifiers and broadband sources.
Peterka, Pavel
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Kasik, Ivan
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Dhar, Anirban
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Dussardier, Bernard
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Blanc, Wilfried
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16 November 2010
Peterka, Pavel
6b5f168e-984a-4d6d-825d-458210fb2ed8
Kasik, Ivan
fcfe6637-b556-407a-9307-89451b97047e
Dhar, Anirban
e9c2056f-ac65-4635-a1ff-7e0f1314bc28
Dussardier, Bernard
c5c4944b-01fc-4913-9017-5e8dbcb7f799
Blanc, Wilfried
98cac95f-5311-4c04-ba01-e1440df51aea
Peterka, Pavel, Kasik, Ivan, Dhar, Anirban, Dussardier, Bernard and Blanc, Wilfried
(2010)
Thulium-doped silica fibers with enhanced 3H4 level lifetime: modelling the devices for 800-820 nm band.
Conference on High-Power Lasers and Applications V, , Beijing, China.
18 - 19 Oct 2010.
9 pp
.
(doi:10.1117/12.871756).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Silica-based thulium-doped fiber devices operating around 810 nm would extend the spectral range covered by highpower fiber devices. Using a comprehensive numerical model of the fiber we have shown that efficient lasing at 810 nm can be achieved for specific ranges of the laser cavity parameters in silica-based thulium-doped fibers with enhanced 3H4 lifetime up to 58 µs as measured in our highly alumina-codoped fibers. We present optimization of the thulium-doped fiber and laser cavity parameters and also potential applications of the developed host material in amplifiers and broadband sources.
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Published date: 16 November 2010
Venue - Dates:
Conference on High-Power Lasers and Applications V, , Beijing, China, 2010-10-18 - 2010-10-19
Identifiers
Local EPrints ID: 442961
URI: http://eprints.soton.ac.uk/id/eprint/442961
PURE UUID: f3a4eb18-b30f-4929-83bb-16c3d2a732c1
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Date deposited: 05 Aug 2020 16:30
Last modified: 16 Mar 2024 08:52
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Contributors
Author:
Pavel Peterka
Author:
Ivan Kasik
Author:
Anirban Dhar
Author:
Bernard Dussardier
Author:
Wilfried Blanc
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