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High speed silicon optical modulators

High speed silicon optical modulators
High speed silicon optical modulators
In this paper we describe two silicon based optical modulators that have been fabricated as part of two projects in which the Surrey group is involved, the “UK Silicon Photonics project” funded by the UK Engineering and Physical Sciences Research Council (EPSRC), and the European “HELIOS” project funded by the European Union. The modulators exploit the carrier depletion effect in MZI structures, but have different advantages and disadvantages. One has a performance that is close to polarisation independence, whilst the other demonstrates a very high extinction ratio for a 40Gb/s silicon modulator. Both are shown to operate at 40Gb/s.
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Thomson, D.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Emerson, N.G.
dbfb7630-1867-4f52-9cc7-2cb6a37f49a7
Fédéli, J-M.
5ba34ada-2ef1-443e-928a-0d5ff5b2bc11
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Thomson, D.
17c1626c-2422-42c6-98e0-586ae220bcda
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Emerson, N.G.
dbfb7630-1867-4f52-9cc7-2cb6a37f49a7
Fédéli, J-M.
5ba34ada-2ef1-443e-928a-0d5ff5b2bc11

Reed, G.T., Thomson, D., Gardes, F.Y., Emerson, N.G. and Fédéli, J-M. (2011) High speed silicon optical modulators. Asia Communications and Photonics Conference and Exhibition (ACP), Shanghai, China. 13 - 16 Nov 2011. (doi:10.1364/ACP.2011.83081M).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper we describe two silicon based optical modulators that have been fabricated as part of two projects in which the Surrey group is involved, the “UK Silicon Photonics project” funded by the UK Engineering and Physical Sciences Research Council (EPSRC), and the European “HELIOS” project funded by the European Union. The modulators exploit the carrier depletion effect in MZI structures, but have different advantages and disadvantages. One has a performance that is close to polarisation independence, whilst the other demonstrates a very high extinction ratio for a 40Gb/s silicon modulator. Both are shown to operate at 40Gb/s.

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More information

Published date: 13 November 2011
Venue - Dates: Asia Communications and Photonics Conference and Exhibition (ACP), Shanghai, China, 2011-11-13 - 2011-11-16

Identifiers

Local EPrints ID: 442973
URI: http://eprints.soton.ac.uk/id/eprint/442973
PURE UUID: 8e570646-e859-413f-91e1-9d5da7584de3
ORCID for F.Y. Gardes: ORCID iD orcid.org/0000-0003-1400-3272

Catalogue record

Date deposited: 05 Aug 2020 16:30
Last modified: 17 Mar 2024 03:26

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Contributors

Author: G.T. Reed
Author: D. Thomson
Author: F.Y. Gardes ORCID iD
Author: N.G. Emerson
Author: J-M. Fédéli

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