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Optical and structural features of silicon-rich a-SiNx:H thin films

Optical and structural features of silicon-rich a-SiNx:H thin films
Optical and structural features of silicon-rich a-SiNx:H thin films
In this work we report a systematic study of fabrication parameters and post-heat treatment on the optical features has been done. Enhancement in optical constant on annealing is attributed phase separation into crystalline silicon (c-Si) and other phases due to out- diffusion of hydrogen. We further report the room-temperature photoluminescence from as-deposited hydrogenated amorphous silicon nitride (a-SiNx:H) films which could be due to formation of silicon nanocrystals and/or structural disorder.
1-2
Singh, S.P.
5f51fff2-8113-4523-bd3a-eff01c4097c1
Oton, C.J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Srivastava, P.
f85726ca-471b-4248-b9db-08719fe813f2
Ghosh, S.
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Prakash, G.V.
4ed21020-f7a2-4c8e-a47b-1a9937d7d7dd
Singh, S.P.
5f51fff2-8113-4523-bd3a-eff01c4097c1
Oton, C.J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Srivastava, P.
f85726ca-471b-4248-b9db-08719fe813f2
Ghosh, S.
2e05d702-b915-4eb4-afda-f89f16793899
Prakash, G.V.
4ed21020-f7a2-4c8e-a47b-1a9937d7d7dd

Singh, S.P., Oton, C.J., Srivastava, P., Ghosh, S. and Prakash, G.V. (2010) Optical and structural features of silicon-rich a-SiNx:H thin films. 3rd International Nanoelectronics Conference: INEC 2010, , Hongkong, China. 03 - 08 Jan 2010. pp. 1-2 . (doi:10.1109/INEC.2010.5425201).

Record type: Conference or Workshop Item (Paper)

Abstract

In this work we report a systematic study of fabrication parameters and post-heat treatment on the optical features has been done. Enhancement in optical constant on annealing is attributed phase separation into crystalline silicon (c-Si) and other phases due to out- diffusion of hydrogen. We further report the room-temperature photoluminescence from as-deposited hydrogenated amorphous silicon nitride (a-SiNx:H) films which could be due to formation of silicon nanocrystals and/or structural disorder.

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More information

Published date: 3 January 2010
Venue - Dates: 3rd International Nanoelectronics Conference: INEC 2010, , Hongkong, China, 2010-01-03 - 2010-01-08

Identifiers

Local EPrints ID: 442993
URI: http://eprints.soton.ac.uk/id/eprint/442993
PURE UUID: 6cce540b-07e0-4d31-a0e5-3ab35ec204c6

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Date deposited: 05 Aug 2020 16:31
Last modified: 16 Mar 2024 08:53

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Contributors

Author: S.P. Singh
Author: C.J. Oton
Author: P. Srivastava
Author: S. Ghosh
Author: G.V. Prakash

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