The University of Southampton
University of Southampton Institutional Repository

Optical and structural features of silicon-rich a-SiNx:H thin films

Optical and structural features of silicon-rich a-SiNx:H thin films
Optical and structural features of silicon-rich a-SiNx:H thin films
In this work we report a systematic study of fabrication parameters and post-heat treatment on the optical features has been done. Enhancement in optical constant on annealing is attributed phase separation into crystalline silicon (c-Si) and other phases due to out- diffusion of hydrogen. We further report the room-temperature photoluminescence from as-deposited hydrogenated amorphous silicon nitride (a-SiNx:H) films which could be due to formation of silicon nanocrystals and/or structural disorder.
1-2
Singh, S.P.
5f51fff2-8113-4523-bd3a-eff01c4097c1
Oton, C.J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Srivastava, P.
f85726ca-471b-4248-b9db-08719fe813f2
Ghosh, S.
2e05d702-b915-4eb4-afda-f89f16793899
Prakash, G.V.
4ed21020-f7a2-4c8e-a47b-1a9937d7d7dd
Singh, S.P.
5f51fff2-8113-4523-bd3a-eff01c4097c1
Oton, C.J.
7e0803bc-34e4-4c6d-8f27-1204ef1775da
Srivastava, P.
f85726ca-471b-4248-b9db-08719fe813f2
Ghosh, S.
2e05d702-b915-4eb4-afda-f89f16793899
Prakash, G.V.
4ed21020-f7a2-4c8e-a47b-1a9937d7d7dd

Singh, S.P., Oton, C.J., Srivastava, P., Ghosh, S. and Prakash, G.V. (2010) Optical and structural features of silicon-rich a-SiNx:H thin films. 3rd International Nanoelectronics Conference: INEC 2010, China. 03 - 08 Jan 2010. pp. 1-2 . (doi:10.1109/INEC.2010.5425201).

Record type: Conference or Workshop Item (Paper)

Abstract

In this work we report a systematic study of fabrication parameters and post-heat treatment on the optical features has been done. Enhancement in optical constant on annealing is attributed phase separation into crystalline silicon (c-Si) and other phases due to out- diffusion of hydrogen. We further report the room-temperature photoluminescence from as-deposited hydrogenated amorphous silicon nitride (a-SiNx:H) films which could be due to formation of silicon nanocrystals and/or structural disorder.

Full text not available from this repository.

More information

Published date: 3 January 2010
Venue - Dates: 3rd International Nanoelectronics Conference: INEC 2010, China, 2010-01-03 - 2010-01-08

Identifiers

Local EPrints ID: 442993
URI: http://eprints.soton.ac.uk/id/eprint/442993
PURE UUID: 6cce540b-07e0-4d31-a0e5-3ab35ec204c6

Catalogue record

Date deposited: 05 Aug 2020 16:31
Last modified: 05 Aug 2020 16:31

Export record

Altmetrics

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×