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On-chip, photon-number-resolving, telecom-band detectors for scalable photonic information processing

On-chip, photon-number-resolving, telecom-band detectors for scalable photonic information processing
On-chip, photon-number-resolving, telecom-band detectors for scalable photonic information processing
We demonstrate an integrated photon-number resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows the detector to be placed at arbitrary locations within a planar optical circuit. Up to 5 photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency of the absorbing tungsten region is 7.2 %.
Gerrits, T.
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Thomas-Peter, N.
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Gates, J.C.
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Lita, A.E.
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Metcalf, B.J.
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Calkins, B.
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Tomlin, N.A.
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Fox, A.E.
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Linares, A.L.
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Spring, J.B.
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Langford, N.K.
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Mirin, R.P.
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Smith, P.G.R.
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Walmsley, I.A.
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Nam, S.W.
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Gerrits, T.
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Thomas-Peter, N.
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Gates, J.C.
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Lita, A.E.
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Metcalf, B.J.
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Calkins, B.
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Tomlin, N.A.
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Fox, A.E.
798fcd00-53c0-41cd-a224-ff644fd00b67
Linares, A.L.
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Spring, J.B.
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Langford, N.K.
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Mirin, R.P.
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Smith, P.G.R.
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Walmsley, I.A.
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Nam, S.W.
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Gerrits, T., Thomas-Peter, N., Gates, J.C., Lita, A.E., Metcalf, B.J., Calkins, B., Tomlin, N.A., Fox, A.E., Linares, A.L., Spring, J.B., Langford, N.K., Mirin, R.P., Smith, P.G.R., Walmsley, I.A. and Nam, S.W. (2012) On-chip, photon-number-resolving, telecom-band detectors for scalable photonic information processing. Conference on Lasers and Electro-Optics (CLEO)/Quantum Electronics and Laser Science (QELS) 2012, , San Jose, United States. 06 - 11 May 2012. (doi:10.1364/QELS.2012.QTu1E.1).

Record type: Conference or Workshop Item (Paper)

Abstract

We demonstrate an integrated photon-number resolving detector, operating in the telecom band at 1550 nm, employing an evanescently coupled design that allows the detector to be placed at arbitrary locations within a planar optical circuit. Up to 5 photons are resolved in the guided optical mode via absorption from the evanescent field into a tungsten transition-edge sensor. The detection efficiency of the absorbing tungsten region is 7.2 %.

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More information

Published date: 6 May 2012
Venue - Dates: Conference on Lasers and Electro-Optics (CLEO)/Quantum Electronics and Laser Science (QELS) 2012, , San Jose, United States, 2012-05-06 - 2012-05-11

Identifiers

Local EPrints ID: 443018
URI: http://eprints.soton.ac.uk/id/eprint/443018
PURE UUID: 5fc5f02b-9151-4771-af58-a00e4cb40870
ORCID for J.C. Gates: ORCID iD orcid.org/0000-0001-8671-5987
ORCID for P.G.R. Smith: ORCID iD orcid.org/0000-0003-0319-718X

Catalogue record

Date deposited: 06 Aug 2020 16:30
Last modified: 17 Mar 2024 02:52

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Contributors

Author: T. Gerrits
Author: N. Thomas-Peter
Author: J.C. Gates ORCID iD
Author: A.E. Lita
Author: B.J. Metcalf
Author: B. Calkins
Author: N.A. Tomlin
Author: A.E. Fox
Author: A.L. Linares
Author: J.B. Spring
Author: N.K. Langford
Author: R.P. Mirin
Author: P.G.R. Smith ORCID iD
Author: I.A. Walmsley
Author: S.W. Nam

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