Mashanovich, G.Z., Reed, G.T., Nedeljković, M., Soler Penadés, J., Mitchell, C.J., Khokhar, A.Z., Littlejohns, C.J., Stanković, S., Chen, Xia, Shen, L., Healy, N., Peacock, A.C., Alonso-Ramos, C., Ortega-Moñux, A., Wangüemert-Pérez, G., Molina-Fernández, I., Cheben, P., Ackert, J.J., Knights, A.P., Gardes, F.Y. and Thomson, D.J. (2016) Silicon and germanium mid-infrared photonics. Proceedings of SPIE, 9755. (doi:10.1117/12.2212834).
Abstract
We present three main material platforms: SOI, suspended Si and Ge on Si. We report low loss SOI waveguides (rib, strip, slot) with losses of ~1dB/cm. We also show efficient modulators and detectors realized in SOI, as well as filters and multiplexers. To extend transparency of SOI waveguides, bottom oxide cladding can be removed. We have fabricated low loss passive devices in a suspended platform that employ subwavelength gratings. Ge on Si material can have larger transparency range than suspended Si. We have designed passive devices in this platform, demonstrated all optical modulation and carried out two photon absorption measurements. We have also investigated theoretically free carrier optical modulation in Ge.
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