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Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide

Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide
Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide
Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m–1 and a Seebeck coefficient of −21.41 μV K–1 for a directly patterned, substoichiometric Bi2S3 thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.
defects in solids, electrical conductivity, sulfur, thin films, vacuum
1944-8244
33647–33655
Recatala Gomez, Jose
d5cf1fe1-93a6-4dd0-a89c-c8f16fe6a056
Ng, Hong Kuan
2d4cfb93-4ed8-4949-bbe9-d628b72b5a1f
Kumar, Pawar
16c8952d-b465-460e-b6e0-faeefbd80e42
Suwardi, Ady
cedecbc2-4d36-42a5-b16d-088a71a34558
Zheng, Minrui
a0527efd-d873-4a32-892a-2dacc9311bb1
Asbahi, Mohamed
01cc1246-3836-4fd0-a6c1-12ea6d4a568e
Tripathy, Sudhiranjan
ecf5feff-c36a-4ed4-afeb-64cc5f74f4be
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Saifullah, Mohammad S. M.
0ee05b43-aca5-493c-a294-b17ed00c0f92
Hippalgaonkar, Kedar
3a01d862-0650-4f5d-9f3c-215fdf4d8ad9
Recatala Gomez, Jose
d5cf1fe1-93a6-4dd0-a89c-c8f16fe6a056
Ng, Hong Kuan
2d4cfb93-4ed8-4949-bbe9-d628b72b5a1f
Kumar, Pawar
16c8952d-b465-460e-b6e0-faeefbd80e42
Suwardi, Ady
cedecbc2-4d36-42a5-b16d-088a71a34558
Zheng, Minrui
a0527efd-d873-4a32-892a-2dacc9311bb1
Asbahi, Mohamed
01cc1246-3836-4fd0-a6c1-12ea6d4a568e
Tripathy, Sudhiranjan
ecf5feff-c36a-4ed4-afeb-64cc5f74f4be
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Saifullah, Mohammad S. M.
0ee05b43-aca5-493c-a294-b17ed00c0f92
Hippalgaonkar, Kedar
3a01d862-0650-4f5d-9f3c-215fdf4d8ad9

Recatala Gomez, Jose, Ng, Hong Kuan, Kumar, Pawar, Suwardi, Ady, Zheng, Minrui, Asbahi, Mohamed, Tripathy, Sudhiranjan, Nandhakumar, Iris S., Saifullah, Mohammad S. M. and Hippalgaonkar, Kedar (2020) Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide. ACS Applied Materials and Interfaces, 12 (30), 33647–33655. (doi:10.1021/acsami.0c06829).

Record type: Article

Abstract

Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m–1 and a Seebeck coefficient of −21.41 μV K–1 for a directly patterned, substoichiometric Bi2S3 thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.

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Accepted/In Press date: 7 July 2020
e-pub ahead of print date: 7 July 2020
Published date: 29 July 2020
Additional Information: Funding Information: A.S., P.K., and K.H. would like to acknowledge funding from the Accelerated Materials Development for Manufacturing Program at A*STAR via the AME Programmatic Fund by the Agency for Science, Technology, and Research under Grant No. A1898b0043. J.R.-G. and I.N. would like to thank A*STAR Graduate Academy’s ARAP programme for funding J.R.-G.’s graduate studies in IMRE, A*STAR. Publisher Copyright: Copyright © 2020 American Chemical Society.
Keywords: defects in solids, electrical conductivity, sulfur, thin films, vacuum

Identifiers

Local EPrints ID: 443392
URI: http://eprints.soton.ac.uk/id/eprint/443392
ISSN: 1944-8244
PURE UUID: e8911cd0-4b09-4692-87e0-be68217e0a09
ORCID for Iris S. Nandhakumar: ORCID iD orcid.org/0000-0002-9668-9126

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Date deposited: 24 Aug 2020 16:32
Last modified: 12 Nov 2024 05:01

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Contributors

Author: Jose Recatala Gomez
Author: Hong Kuan Ng
Author: Pawar Kumar
Author: Ady Suwardi
Author: Minrui Zheng
Author: Mohamed Asbahi
Author: Sudhiranjan Tripathy
Author: Mohammad S. M. Saifullah
Author: Kedar Hippalgaonkar

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