Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide
Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide
Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m–1 and a Seebeck coefficient of −21.41 μV K–1 for a directly patterned, substoichiometric Bi2S3 thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.
defects in solids, electrical conductivity, sulfur, thin films, vacuum
33647–33655
Recatala Gomez, Jose
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Ng, Hong Kuan
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Kumar, Pawar
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Suwardi, Ady
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Zheng, Minrui
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Asbahi, Mohamed
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Tripathy, Sudhiranjan
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Nandhakumar, Iris S.
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Saifullah, Mohammad S. M.
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Hippalgaonkar, Kedar
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29 July 2020
Recatala Gomez, Jose
d5cf1fe1-93a6-4dd0-a89c-c8f16fe6a056
Ng, Hong Kuan
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Kumar, Pawar
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Suwardi, Ady
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Zheng, Minrui
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Asbahi, Mohamed
01cc1246-3836-4fd0-a6c1-12ea6d4a568e
Tripathy, Sudhiranjan
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Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Saifullah, Mohammad S. M.
0ee05b43-aca5-493c-a294-b17ed00c0f92
Hippalgaonkar, Kedar
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Recatala Gomez, Jose, Ng, Hong Kuan, Kumar, Pawar, Suwardi, Ady, Zheng, Minrui, Asbahi, Mohamed, Tripathy, Sudhiranjan, Nandhakumar, Iris S., Saifullah, Mohammad S. M. and Hippalgaonkar, Kedar
(2020)
Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide.
ACS Applied Materials and Interfaces, 12 (30), .
(doi:10.1021/acsami.0c06829).
Abstract
Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m–1 and a Seebeck coefficient of −21.41 μV K–1 for a directly patterned, substoichiometric Bi2S3 thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.
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More information
Accepted/In Press date: 7 July 2020
e-pub ahead of print date: 7 July 2020
Published date: 29 July 2020
Additional Information:
Funding Information:
A.S., P.K., and K.H. would like to acknowledge funding from the Accelerated Materials Development for Manufacturing Program at A*STAR via the AME Programmatic Fund by the Agency for Science, Technology, and Research under Grant No. A1898b0043. J.R.-G. and I.N. would like to thank A*STAR Graduate Academy’s ARAP programme for funding J.R.-G.’s graduate studies in IMRE, A*STAR.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
Keywords:
defects in solids, electrical conductivity, sulfur, thin films, vacuum
Identifiers
Local EPrints ID: 443392
URI: http://eprints.soton.ac.uk/id/eprint/443392
ISSN: 1944-8244
PURE UUID: e8911cd0-4b09-4692-87e0-be68217e0a09
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Date deposited: 24 Aug 2020 16:32
Last modified: 12 Nov 2024 05:01
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Contributors
Author:
Jose Recatala Gomez
Author:
Hong Kuan Ng
Author:
Pawar Kumar
Author:
Ady Suwardi
Author:
Minrui Zheng
Author:
Mohamed Asbahi
Author:
Sudhiranjan Tripathy
Author:
Mohammad S. M. Saifullah
Author:
Kedar Hippalgaonkar
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