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Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide

Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide
Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide
Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m–1 and a Seebeck coefficient of −21.41 μV K–1 for a directly patterned, substoichiometric Bi2S3 thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.
defects in solids, electrical conductivity, sulfur, thin films, vacuum
1944-8244
33647–33655
Recatala Gomez, Jose
d5cf1fe1-93a6-4dd0-a89c-c8f16fe6a056
Ng, Hong Kuan
2d4cfb93-4ed8-4949-bbe9-d628b72b5a1f
Kumar, Pawar
16c8952d-b465-460e-b6e0-faeefbd80e42
Suwardi, Ady
cedecbc2-4d36-42a5-b16d-088a71a34558
Zheng, Minrui
a0527efd-d873-4a32-892a-2dacc9311bb1
Asbahi, Mohamed
01cc1246-3836-4fd0-a6c1-12ea6d4a568e
Tripathy, Sudhiranjan
ecf5feff-c36a-4ed4-afeb-64cc5f74f4be
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Saifullah, Mohammad S. M.
0ee05b43-aca5-493c-a294-b17ed00c0f92
Hippalgaonkar, Kedar
3a01d862-0650-4f5d-9f3c-215fdf4d8ad9
Recatala Gomez, Jose
d5cf1fe1-93a6-4dd0-a89c-c8f16fe6a056
Ng, Hong Kuan
2d4cfb93-4ed8-4949-bbe9-d628b72b5a1f
Kumar, Pawar
16c8952d-b465-460e-b6e0-faeefbd80e42
Suwardi, Ady
cedecbc2-4d36-42a5-b16d-088a71a34558
Zheng, Minrui
a0527efd-d873-4a32-892a-2dacc9311bb1
Asbahi, Mohamed
01cc1246-3836-4fd0-a6c1-12ea6d4a568e
Tripathy, Sudhiranjan
ecf5feff-c36a-4ed4-afeb-64cc5f74f4be
Nandhakumar, Iris S.
e9850fe5-1152-4df8-8a26-ed44b5564b04
Saifullah, Mohammad S. M.
0ee05b43-aca5-493c-a294-b17ed00c0f92
Hippalgaonkar, Kedar
3a01d862-0650-4f5d-9f3c-215fdf4d8ad9

Recatala Gomez, Jose, Ng, Hong Kuan, Kumar, Pawar, Suwardi, Ady, Zheng, Minrui, Asbahi, Mohamed, Tripathy, Sudhiranjan, Nandhakumar, Iris S., Saifullah, Mohammad S. M. and Hippalgaonkar, Kedar (2020) Thermoelectric properties of sub-stoichiometric electron beam patterned bismuth sulfide. ACS Applied Materials & Interfaces, 12 (30), 33647–33655. (doi:10.1021/acsami.0c06829).

Record type: Article

Abstract

Direct patterning of thermoelectric metal chalcogenides can be challenging and is normally constrained to certain geometries and sizes. Here we report the synthesis, characterization, and direct writing of sub-10 nm wide bismuth sulfide (Bi2S3) using a single-source, spin-coatable, and electron-beam-sensitive bismuth(III) ethylxanthate precursor. In order to increase the intrinsically low carrier concentration of pristine Bi2S3, we developed a self-doping methodology in which sulfur vacancies are manipulated by tuning the temperature during vacuum annealing, to produce an electron-rich thermoelectric material. We report a room-temperature electrical conductivity of 6 S m–1 and a Seebeck coefficient of −21.41 μV K–1 for a directly patterned, substoichiometric Bi2S3 thin film. We expect that our demonstration of directly writable thermoelectric films, with further optimization of structure and morphology, can be useful for on-chip applications.

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More information

Accepted/In Press date: 7 July 2020
e-pub ahead of print date: 7 July 2020
Published date: 29 July 2020
Keywords: defects in solids, electrical conductivity, sulfur, thin films, vacuum

Identifiers

Local EPrints ID: 443392
URI: http://eprints.soton.ac.uk/id/eprint/443392
ISSN: 1944-8244
PURE UUID: e8911cd0-4b09-4692-87e0-be68217e0a09
ORCID for Iris S. Nandhakumar: ORCID iD orcid.org/0000-0002-9668-9126

Catalogue record

Date deposited: 24 Aug 2020 16:32
Last modified: 18 Feb 2021 16:50

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