Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour deposition
Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour deposition
Thermoelectric generators are attractive for autonomous sensor systems where regular battery replacement would not only cause an increase in the maintenance costs and discontinuity in the operation, but also destroy the concept of a truly autonomous system. Micro-thermoelectric generators utilise thin films of material for energy harvesting which can greatly reduce the amount of material used, which is especially important for rare elements such as tellurium. Thin films of Bi2Te3 were successfully prepared via a single source precursor CVD method. The thermoelectric performance of these films is improved by alloying a Bi2Se3 precursor to deposit ternary Bi2Te3-xSex. The composition of the ternary system is tuned to optimise the combination of carrier concentration and mobility to give a three-fold enhancement of the thermoelectric power factor at 300 K, and six-fold enhancement at 500 K, with respect to Bi2Te3. This improvement from the substitution of Te with Se is believed to be due to donor effects, as well as point defects caused by this substitution.
Chemical vapour deposition, Point defect, Thermoelectric, Thin films
Newbrook, Daniel W
8eb26553-e1e2-492d-ad78-ce51a487f31f
Richards, Stephen P
ebe5e699-553f-408b-ab9d-d20270e952c1
Greenacre, Victoria
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Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
25 December 2020
Newbrook, Daniel W
8eb26553-e1e2-492d-ad78-ce51a487f31f
Richards, Stephen P
ebe5e699-553f-408b-ab9d-d20270e952c1
Greenacre, Victoria
c665a38b-0b1a-4671-ac75-bf0679dd1c57
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Levason, William
e7f6d7c7-643c-49f5-8b57-0ebbe1bb52cd
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Newbrook, Daniel W, Richards, Stephen P, Greenacre, Victoria, Hector, Andrew L., Levason, William, Reid, Gillian, De Groot, C.H. and Huang, Ruomeng
(2020)
Improved thermoelectric performance of Bi2Se3 alloyed Bi2Te3 thin films via low pressure chemical vapour deposition.
Journal of Alloys and Compounds, 848, [156523].
(doi:10.1016/j.jallcom.2020.156523).
Abstract
Thermoelectric generators are attractive for autonomous sensor systems where regular battery replacement would not only cause an increase in the maintenance costs and discontinuity in the operation, but also destroy the concept of a truly autonomous system. Micro-thermoelectric generators utilise thin films of material for energy harvesting which can greatly reduce the amount of material used, which is especially important for rare elements such as tellurium. Thin films of Bi2Te3 were successfully prepared via a single source precursor CVD method. The thermoelectric performance of these films is improved by alloying a Bi2Se3 precursor to deposit ternary Bi2Te3-xSex. The composition of the ternary system is tuned to optimise the combination of carrier concentration and mobility to give a three-fold enhancement of the thermoelectric power factor at 300 K, and six-fold enhancement at 500 K, with respect to Bi2Te3. This improvement from the substitution of Te with Se is believed to be due to donor effects, as well as point defects caused by this substitution.
Text
TE ternary-Accepted Version
- Accepted Manuscript
More information
Accepted/In Press date: 23 July 2020
e-pub ahead of print date: 4 August 2020
Published date: 25 December 2020
Keywords:
Chemical vapour deposition, Point defect, Thermoelectric, Thin films
Identifiers
Local EPrints ID: 443441
URI: http://eprints.soton.ac.uk/id/eprint/443441
ISSN: 0925-8388
PURE UUID: 2f5951cb-f9f7-4ec9-bba4-e3c8e0d6bc2e
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Date deposited: 25 Aug 2020 16:33
Last modified: 12 Nov 2024 05:07
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