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GeSi bandgap shift for tuneable high speed modulators

GeSi bandgap shift for tuneable high speed modulators
GeSi bandgap shift for tuneable high speed modulators
We report the results of absorption tunability of submicron rib waveguides based on Ge98.5%Si1.5% integrated into the Si platform. The transmission spectrum was characterised between 1520 nm and 1600 nm, before and after RTA annealing. The standard Tauc method was used to characterise the absorption profile of devices before and after thermal annealing. Material characterisation and simulations are also included to investigate the effect of RTA on the devices optical behaviour. A maximum blueshift of 38nm is reported using the proposed annealing technique which provides a cost-effective and efficient tool to tune the operational wavelength of devices such as electro-absorption modulators, realized on the SOI platform.
2159-3930
Mastronardi, L.
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Banakar, M.
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Khokhar, A.Z.
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Domínguez Bucio, T.
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Littlejohns, C.
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Bernier, N.
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Robin, E.
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Rouviere, J-L
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Gambacorti, N.
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Mashanovich, G.Z.
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Gardes, F.Y.
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Mastronardi, L.
ea0aef76-de7e-4bdc-85be-1dc62dbf7802
Banakar, M.
2da59916-a7af-4cab-bc5b-bfe28e29d974
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Domínguez Bucio, T.
83b57799-c566-473c-9b53-92e9c50b4287
Littlejohns, C.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Bernier, N.
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Robin, E.
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Rouviere, J-L
a3307b49-b889-4535-9474-513178f0f012
Gambacorti, N.
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Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Gardes, F.Y.
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Mastronardi, L., Banakar, M., Khokhar, A.Z., Domínguez Bucio, T., Littlejohns, C., Bernier, N., Robin, E., Rouviere, J-L, Gambacorti, N., Mashanovich, G.Z. and Gardes, F.Y. (2020) GeSi bandgap shift for tuneable high speed modulators. Optical Materials Express.

Record type: Article

Abstract

We report the results of absorption tunability of submicron rib waveguides based on Ge98.5%Si1.5% integrated into the Si platform. The transmission spectrum was characterised between 1520 nm and 1600 nm, before and after RTA annealing. The standard Tauc method was used to characterise the absorption profile of devices before and after thermal annealing. Material characterisation and simulations are also included to investigate the effect of RTA on the devices optical behaviour. A maximum blueshift of 38nm is reported using the proposed annealing technique which provides a cost-effective and efficient tool to tune the operational wavelength of devices such as electro-absorption modulators, realized on the SOI platform.

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In preparation date: 19 August 2020

Identifiers

Local EPrints ID: 443538
URI: http://eprints.soton.ac.uk/id/eprint/443538
ISSN: 2159-3930
PURE UUID: 7b8f32cc-748e-41cd-ae17-602974e2b67c
ORCID for L. Mastronardi: ORCID iD orcid.org/0000-0003-1489-2778
ORCID for T. Domínguez Bucio: ORCID iD orcid.org/0000-0002-3664-1403

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Date deposited: 28 Aug 2020 16:31
Last modified: 29 Aug 2020 01:51

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Contributors

Author: L. Mastronardi ORCID iD
Author: M. Banakar
Author: A.Z. Khokhar
Author: C. Littlejohns
Author: N. Bernier
Author: E. Robin
Author: J-L Rouviere
Author: N. Gambacorti
Author: F.Y. Gardes

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