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Femtosecond mode-locked VECSEL from widely cw-tunable gain chips

Femtosecond mode-locked VECSEL from widely cw-tunable gain chips
Femtosecond mode-locked VECSEL from widely cw-tunable gain chips
We describe passively mode-locking of an InGaAs quantum well laser, comparing different dielectric coatings applied to the same gain wafer. A 7-fold variation in pulse duration down to 817 fs was observed.
Head, C.R.
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Heine, A.
5c42406b-6b31-4295-9ebc-665ecb75b8fb
Shaw, E.A.
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Turnbull, A.P.
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Unger, P.
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Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c
Head, C.R.
a32d57ad-9449-4d10-9eb0-ce8c95a1c0e0
Heine, A.
5c42406b-6b31-4295-9ebc-665ecb75b8fb
Shaw, E.A.
0bb156bd-9e0a-4bd9-88a2-0387c74c8404
Turnbull, A.P.
f6cf30f9-1906-44ac-aecd-0e74b2a938c3
Unger, P.
da6d0fe6-669a-45e4-b3e7-3def900b62cc
Tropper, A.C.
f3505426-e0d5-4e91-aed3-aecdb44b393c

Head, C.R., Heine, A., Shaw, E.A., Turnbull, A.P., Unger, P. and Tropper, A.C. (2014) Femtosecond mode-locked VECSEL from widely cw-tunable gain chips. Conference on Lasers and Electro-Optics (CLEO '14), San Jose, San Jose, United States. 08 - 13 Jun 2014. (doi:10.1364/CLEO_AT.2014.JTu4A.120).

Record type: Conference or Workshop Item (Paper)

Abstract

We describe passively mode-locking of an InGaAs quantum well laser, comparing different dielectric coatings applied to the same gain wafer. A 7-fold variation in pulse duration down to 817 fs was observed.

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More information

Published date: 2014
Additional Information: Poster
Venue - Dates: Conference on Lasers and Electro-Optics (CLEO '14), San Jose, San Jose, United States, 2014-06-08 - 2014-06-13

Identifiers

Local EPrints ID: 443624
URI: http://eprints.soton.ac.uk/id/eprint/443624
PURE UUID: 71385049-6f2d-4ea7-81e9-5384c1f14148

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Date deposited: 04 Sep 2020 16:33
Last modified: 16 Mar 2024 09:07

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Contributors

Author: C.R. Head
Author: A. Heine
Author: E.A. Shaw
Author: A.P. Turnbull
Author: P. Unger
Author: A.C. Tropper

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